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The detection of doped Cr presence in Sr0.6Ba0.4Nb2O3 by SIMS
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Authors:
Lee, Unchul
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U.S. Army Research Laboratory
Year: 1999 Publisher: Adelphi, MD : Army Research Laboratory,
Year: 1999 Publisher: Adelphi, MD : Army Research Laboratory,
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Observation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide
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Authors:
Semendy, Fred
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Lee, Unchul
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U.S. Army Research Laboratory
Year: 2007 Publisher: Adelphi, MD : Army Research Laboratory,
Year: 2007 Publisher: Adelphi, MD : Army Research Laboratory,
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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
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Authors:
Semendy, Fred.
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Boyd, Phillip.
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Lee, Unchul.
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U.S. Army Research Laboratory.
Year: 2004 Publisher: Adelphi, MD : Army Research Laboratory,
Year: 2004 Publisher: Adelphi, MD : Army Research Laboratory,
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