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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Nitrides. --- Epitaxy. --- Optical materials. --- Surfaces (Physics). --- Crystallography. --- Optical and Electronic Materials. --- Semiconductors. --- Numerical and Computational Physics, Simulation. --- Surfaces and Interfaces, Thin Films. --- Crystallography and Scattering Methods. --- Leptology --- Physical sciences --- Mineralogy --- Physics --- Surface chemistry --- Surfaces (Technology) --- Optics --- Materials --- Epitaxial growth --- Crystal growth --- Heat resistant alloys --- Surface hardening --- Electronic materials. --- Physics. --- Materials—Surfaces. --- Thin films. --- Films, Thin --- Solid film --- Solid state electronics --- Solids --- Coatings --- Thick films --- Natural philosophy --- Philosophy, Natural --- Dynamics --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Electronic materials