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Arturo Hernandez presents the results of 25 years of research into the factors that might help us to understand how two (or more) languages are stored in one brain. It is clear that the brain is not egalitarian-some languages are privileged and others are not, but why?
Bilingualism --- Code switching (Linguistics) --- Psycholinguistics. --- Language, Psychology of --- Language and languages --- Psychology of language --- Speech --- Linguistics --- Psychology --- Thought and thinking --- Language shift --- Switching (Linguistics) --- Diglossia (Linguistics) --- Languages in contact --- Multilingualism --- Psychological aspects. --- Physiological aspects. --- Psychological aspects --- Script switching (Linguistics)
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Ethnology. Cultural anthropology --- Applied arts. Arts and crafts --- Hidalgo
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Een silicium-germaan-koolstof (SiGe:C) legering heeft unieke materiaaleigenschappen voor de optimalizatie van de RF performantie van hetero-junctie bipolaire transistoren (HBTs). Deze thesis focusseert op het onderzoek hoe deze unieke eigenschappen optimaal kunnen gebruikt worden om het vermogenverbruik enerzijds, of om de snelheid anderzijds, te verbeteren in een concrete component. Om dit doel te bereiken is een fundamenteel begrip van dit materiaal vereist. Dit werk onderzoekt de impact op de materiaaleigenschappen van het toevoegen van een kleine hoeveelheid koolstof (≤ 0.2%) in de SiGe laag. Deze toevoeging onderdrukt de diffusie van boor, wat scherpere basisprofielen toelaat, terwijl de verbeterde performantie door de aanwezigheid van Ge behouden blijft. Tijdens dit werk werd een model gebaseerd op de fysische fenomenen ge- ïm-ple-men-teerd, dat het diffusiegedrag van boor en koolstof nauwkeurig beschrijft. Meer in het bijzonder, het model simuleert nauwkeurig het diffusiegedrag van boor en koolstof in een ruime set van structuren met experimentele voorwaarden die algemeen voorkomen tijdens de fabrikatie van SiGe:C HBTs. Een gecalibreerd technology-computer-aided-design (TCAD) platform, vanaf de processing tot de elektrische simulaties, werd opgezet. Dit geeft ons een krachtig instrument om de performantie van de HBTs te optimalizeren. Deze nauwkeurige twee-dimensionale simulaties werden aangevuld met design-of-experiments (DOE) methodes. Twee SiGe:C HBT optimalizaties werden uitgevoerd. De eerste optimalizatie richtte zich op de fabrikatie van componenten met state-of-the-art performantie voor applicaties met zeer laag stroomverbruik. De tweede optimalizatie richtte zich op hoge snelheidscomponenten met afsnijfrekwenties voor stroomversterking fT en afsnijfrekwentie voor unilaterale vermogenversterking fmax boven de 200 GHz. In beide gevallen werd de op simulaties gebaseerde optimalizatie geverifieerd door te vergelijken met elektrische metingen. Silicon-germanium-carbon layers (SiGe:C) have unique properties for the optimization of RF performance of heterojunction bipolar transistors (HBTs). This thesis focuses on the investigation of how the unique properties of this material can be used optimally for improved either low power or high speed RF performance in a practical device. In order to reach the goal a fundamental understanding of the SiGe:C layer is required. This work examines the impact of the addition of a small amount of carbon (≤ 0.2%) into the SiGe layer on the material properties of the SiGe:C layer. The introduction of carbon in the SiGe base layer suppresses the boron diffusion which allows sharper base profile engineering, maintaining the additional degree of freedom offered by the SiGe to engineer the transistor to better performance over the SiGe HBT. During the present work we have implemented a physics-based model that describes accurately the diffusion behaviors of boron and carbon in SiGe:C layers. In particular, the model successfully accounts for boron and carbon behavior in a wide range of sample structures with experimental conditions commonly found in the fabrication of SiGe:C HBTs. The set-up of a calibrated technology computer-aided-design (TCAD) chain from process to device simulations has been performed which provide us with a powerful tool to perform device optimizations. The accurate two-dimensional simulations were complemented with the use of design-of-experiments (DOE) methods during the device optimizations. Two SiGe:C HBT optimizations have been performed. The first optimization is oriented towards the fabrication of devices that show state-of-the-art device performance for ultra low power applications. The second optimization is oriented towards high speed devices with RF performances providing peak fT and peak fmax values above 200 GHz. In both optimizations, verification of the TCAD-based optimization is performed through a comparison between measured and simulated electrical characteristics.
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This Element provides an overview of research considering variables deemed to impact bilingual language acquisition, and highlights research outcomes from a variety of disciplines. An exploratory study takes into account these variables and examines the language acquisition of adult Spanish-English bilinguals across a range of domains in their two languages. The results demonstrate that the highly interactive nature of bilingual speakers' languages is in line with a holistic view of the dynamic, interdependent nature of bilingualism as described by usage-based theories and dynamic systems theories, and by the conceptualization of bilingual language from a Dynamic Interactive Processing Perspective.
Bilingualism. --- Education, Bilingual. --- Language acquisition. --- Second language acquisition --- Language and languages --- Foreign languages --- Languages --- Anthropology --- Communication --- Ethnology --- Information theory --- Meaning (Psychology) --- Philology --- Linguistics --- Second language learning --- Language acquisition --- Acquisition of language --- Developmental linguistics --- Developmental psycholinguistics --- Language development in children --- Psycholinguistics, Developmental --- Interpersonal communication in children --- Psycholinguistics --- Bilingual education --- Bilingualism --- Multilingual education --- Languages in contact --- Multilingualism --- Research. --- Acquisition
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Folklore --- Architecture --- Archeology --- Hidalgo
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