Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Electricity & Magnetism --- Physics --- Physical Sciences & Mathematics --- Physics. --- Solid state physics. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Semiconductors. --- Microwaves. --- Optical engineering. --- Nanotechnology. --- Microwaves, RF and Optical Engineering. --- Nanoscale Science and Technology. --- Solid State Physics. --- Molecular technology --- Nanoscale technology --- High technology --- Mechanical engineering --- Hertzian waves --- Electric waves --- Electromagnetic waves --- Geomagnetic micropulsations --- Radio waves --- Shortwave radio --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Solids --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Materials --- Doped semiconductors. --- Semiconductor doping --- Semiconductors

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Quantum mechanics. Quantumfield theory --- Optics. Quantum optics --- Electronics and optics of solids --- Solid state physics --- Chemical structure --- Electronics --- Electrical engineering --- quantumfysica --- photonics --- nanotechniek --- lasers (technologie) --- elektronica --- transistoren --- halfgeleiders --- microwaves --- optica

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Physics. --- Optical materials. --- Nanotechnology. --- Semiconductors. --- Optical and Electronic Materials. --- Solid State Physics. --- Nanoscale Science and Technology. --- Physics --- Physical Sciences & Mathematics --- Electricity & Magnetism --- Molecular technology --- Nanoscale technology --- Optics --- Natural philosophy --- Philosophy, Natural --- Materials --- Solid state physics. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Electronic materials. --- Semiconductors --- Nanostructured materials. --- Thomas-Fermi theory. --- Testing --- Optical methods. --- Fermi-Thomas model --- Fermi-Thomas theory --- Thomas-Fermi atom model --- Thomas-Fermi-Dirac method --- Thomas-Fermi-Dirac model --- Thomas-Fermi method --- Thomas-Fermi model --- Atomic structure --- Nuclear models --- Nanomaterials --- Nanometer materials --- Nanophase materials --- Nanostructure controlled materials --- Nanostructure materials --- Ultra-fine microstructure materials --- Microstructure --- Nanotechnology --- High technology --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Solids --- Electronic materials --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Atomic mass. --- Effective mass (Physics). --- Low-dimensional semiconductors. --- Effective mass (Physics) --- Low-dimensional semiconductors --- Atomic mass --- Physics --- Physical Sciences & Mathematics --- Atomic Physics --- Compound semiconductors. --- Optoelectronics. --- Low-dimensional structures (Semiconductors) --- Low-dimensional systems (Semiconductors) --- Optical materials. --- Materials. --- Microwaves. --- Solid State Physics. --- Optical and Electronic Materials. --- Nanoscale Science and Technology. --- Structural Materials. --- Microwaves, RF and Optical Engineering. --- Quantum Optics. --- Semiconductors --- Electronics --- Photonics --- Hertzian waves --- Electric waves --- Electromagnetic waves --- Geomagnetic micropulsations --- Radio waves --- Shortwave radio --- Engineering --- Engineering materials --- Industrial materials --- Engineering design --- Manufacturing processes --- Optics --- Materials --- Solid state physics. --- Electronic materials. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Structural materials. --- Optical engineering. --- Quantum optics. --- Photons --- Quantum theory --- Mechanical engineering --- Architectural materials --- Architecture --- Building --- Building supplies --- Buildings --- Construction materials --- Structural materials --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Electronic materials --- Solids

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Electronics and optics of solids --- Spectrometric and optical chemical analysis --- Electrical engineering --- nanotechniek --- transistoren --- halfgeleiders --- spectrometrie