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"Sustainable Material Solutions for Solar Energy Technologies: Processing Techniques and Applications provides an overview of challenges that must be addressed to efficiently utilize solar energy. The book explores novel materials and device architectures that have been developed to optimize energy conversion efficiencies and minimize environmental impacts. Advances in technologies for harnessing solar energy are extensively discussed, with topics including materials processing, device fabrication, sustainability of materials and manufacturing, and current state-of-the-art. Leading international experts discuss the applications, challenges, and future prospects of research in this increasingly vital field, providing a valuable resource for students and researchers working in this field. Explores the fundamentals of sustainable materials for solar energy applications, with in-depth discussions of the most promising material solutions for solar energy technologies: photocatalysis, photovoltaic, hydrogen production, harvesting and storage. Discusses the environmental challenges to be overcome and importance of efficient materials utilization for clean energy. Looks at design materials processing and optimization of device fabrication via metrics such as power-to-weight ratio, effectiveness at EOL compared to BOL, and life-cycle analysis"--

Solar energy. --- Sustainable engineering. --- Materials --- Environmental aspects. --- Engineering --- Engineering materials --- Industrial materials --- Engineering design --- Manufacturing processes --- Engineering sustainability --- Green engineering --- Green technology --- Environmental engineering --- Solar power --- Force and energy --- Renewable energy sources --- Solar radiation

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Emerging Materials for Energy Conversion and Storage presents the state-of-art of emerging materials for energy conversion technologies (solar cells and fuel cells) and energy storage technologies (batteries, supercapacitors and hydrogen storage). The book is organized into five primary sections, each with three chapters authored by worldwide experts in the fields of materials science, physics, chemistry and engineering. It covers the fundamentals, functionalities, challenges and prospects of different classes of emerging materials, such as wide bandgap semiconductors, oxides, carbon-based nanostructures, advanced ceramics, chalcogenide nanostructures, and flexible organic electronics nanomaterials. The book is an important reference for students and researchers (from academics, but also industry) interested in understanding the properties of emerging materials.

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MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Engineering --- Technology --- History. --- high-power impulse magnetron sputtering (HiPIMS) --- silicon carbide --- aluminum nitride --- thin film --- Rutherford backscattering spectrometry (RBS) --- grazing incidence X-ray diffraction (GIXRD) --- Raman spectroscopy --- 6H-SiC --- indentation --- deformation --- material removal mechanisms --- critical load --- 4H-SiC --- critical depth of cut --- Berkovich indenter --- cleavage strength --- nanoscratching --- power electronics --- high-temperature converters --- MEMS devices --- SiC power electronic devices --- neural interface --- neural probe --- neural implant --- microelectrode array --- MEA --- SiC --- 3C-SiC --- doped SiC --- n-type --- p-type --- amorphous SiC --- epitaxial growth --- electrochemical characterization --- MESFET --- simulation --- PAE --- bulk micromachining --- electrochemical etching --- circular membrane --- bulge test --- vibrometry --- mechanical properties --- Young’s modulus --- residual stress --- FEM --- semiconductor radiation detector --- microstrip detector --- power module --- negative gate-source voltage spike --- 4H-SiC, epitaxial layer --- Schottky barrier --- radiation detector --- point defects --- deep level transient spectroscopy (DLTS) --- thermally stimulated current spectroscopy (TSC) --- electron beam induced current spectroscopy (EBIC) --- pulse height spectroscopy (PHS) --- n/a --- Young's modulus

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MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Engineering --- Technology --- high-power impulse magnetron sputtering (HiPIMS) --- silicon carbide --- aluminum nitride --- thin film --- Rutherford backscattering spectrometry (RBS) --- grazing incidence X-ray diffraction (GIXRD) --- Raman spectroscopy --- 6H-SiC --- indentation --- deformation --- material removal mechanisms --- critical load --- 4H-SiC --- critical depth of cut --- Berkovich indenter --- cleavage strength --- nanoscratching --- power electronics --- high-temperature converters --- MEMS devices --- SiC power electronic devices --- neural interface --- neural probe --- neural implant --- microelectrode array --- MEA --- SiC --- 3C-SiC --- doped SiC --- n-type --- p-type --- amorphous SiC --- epitaxial growth --- electrochemical characterization --- MESFET --- simulation --- PAE --- bulk micromachining --- electrochemical etching --- circular membrane --- bulge test --- vibrometry --- mechanical properties --- Young's modulus --- residual stress --- FEM --- semiconductor radiation detector --- microstrip detector --- power module --- negative gate-source voltage spike --- 4H-SiC, epitaxial layer --- Schottky barrier --- radiation detector --- point defects --- deep level transient spectroscopy (DLTS) --- thermally stimulated current spectroscopy (TSC) --- electron beam induced current spectroscopy (EBIC) --- pulse height spectroscopy (PHS) --- History. --- high-power impulse magnetron sputtering (HiPIMS) --- silicon carbide --- aluminum nitride --- thin film --- Rutherford backscattering spectrometry (RBS) --- grazing incidence X-ray diffraction (GIXRD) --- Raman spectroscopy --- 6H-SiC --- indentation --- deformation --- material removal mechanisms --- critical load --- 4H-SiC --- critical depth of cut --- Berkovich indenter --- cleavage strength --- nanoscratching --- power electronics --- high-temperature converters --- MEMS devices --- SiC power electronic devices --- neural interface --- neural probe --- neural implant --- microelectrode array --- MEA --- SiC --- 3C-SiC --- doped SiC --- n-type --- p-type --- amorphous SiC --- epitaxial growth --- electrochemical characterization --- MESFET --- simulation --- PAE --- bulk micromachining --- electrochemical etching --- circular membrane --- bulge test --- vibrometry --- mechanical properties --- Young's modulus --- residual stress --- FEM --- semiconductor radiation detector --- microstrip detector --- power module --- negative gate-source voltage spike --- 4H-SiC, epitaxial layer --- Schottky barrier --- radiation detector --- point defects --- deep level transient spectroscopy (DLTS) --- thermally stimulated current spectroscopy (TSC) --- electron beam induced current spectroscopy (EBIC) --- pulse height spectroscopy (PHS)