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Rare earth and transition metal doping of semiconductor materials
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ISBN: 008100060X 0081000413 9780081000601 9780081000410 Year: 2016 Publisher: Cambridge Woodhead Publishing

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Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics
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ISBN: 9780081000601 008100060X Year: 2016 Publisher: Cambridge Woodhead Publishing

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Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devicesAnalyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronicsDetails the properties of semiconductors for spintronics.

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Novel high efficiency photovoltaic devices based on the III-N material system : December 7, 2005 - June 6, 2008
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Year: 2010 Publisher: Golden, CO : National Renewable Energy Laboratory,

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The initial motivation for the University of Delaware/Georgia Institute of Technology project was the then-newly discovered bandgap of InN, which was re-measured at ~0.7 eV, rather than the previous 1.9 eV. This made InGaN a potential material for solar cells with the possibility of absorbing 99% of the solar irradiance. The advantages of the InGaN material system are the wide range of direct bandgap, high absorption coefficient, a low effective mass (high mobility), and strong polarization effects. However, the challenges include material quality, defect density, doping, substrates, and growth issues. Our project led to the understanding of the above challenges; in particular, we studied the material quality in terms of phase separation and how to suppress it. We modeled polarization and developed a solar cell design with these new models.


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Novel high efficiency photovoltaic devices based on the III-N material system : final technical report, 7 December 2005 - 29 August 2008
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Year: 2008 Publisher: Golden, Colo. : National Renewable Energy Laboratory,

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