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This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

Doped semiconductors. --- Rare earth nitrates. --- Doped semiconductors --- Compound semiconductors --- Gallium nitride --- Indium compounds --- Aluminum nitride --- Optoelectronics --- Spintronics --- Physics --- Engineering & Applied Sciences --- Physical Sciences & Mathematics --- Light & Optics --- Electricity & Magnetism --- Applied Physics --- Materials --- Physics. --- Quantum optics. --- Optical materials. --- Electronic materials. --- Optics, Lasers, Photonics, Optical Devices. --- Optical and Electronic Materials. --- Quantum Optics. --- Nitrates --- Rare earth metal compounds --- Semiconductor doping --- Semiconductors --- Optics --- Lasers. --- Photonics. --- Photons --- Quantum theory --- Electronic materials --- New optics --- Light amplification by stimulated emission of radiation --- Masers, Optical --- Optical masers --- Light amplifiers --- Light sources --- Optoelectronic devices --- Nonlinear optics --- Optical parametric oscillators

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Transition metal compounds. --- Chemicals

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Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devicesAnalyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronicsDetails the properties of semiconductors for spintronics.