Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering. .

Gate array circuits. --- Dielectrics. --- Metal oxide semiconductors, Complementary. --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Electrical engineering --- Electric insulators and insulation --- Gate arrays --- Integrated circuits --- Materials --- Physics. --- Chemistry, Physical organic. --- Optical materials. --- Computer engineering. --- Physics, general. --- Physical Chemistry. --- Optical and Electronic Materials. --- Electrical Engineering. --- Computers --- Optics --- Chemistry, Physical organic --- Chemistry, Organic --- Chemistry, Physical and theoretical --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Design and construction --- Physical chemistry. --- Electronic materials. --- Electrical engineering. --- Chemistry, Theoretical --- Physical chemistry --- Theoretical chemistry --- Chemistry --- Electric engineering --- Engineering --- Electronic materials

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This unique book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices, and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges, and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. This book also: ·         Discusses why semiconductor substrates are an excellent integration platform for making hybrid logic/sensor devices ·         Provides a brief introduction to the methods accessible to non-experts, before going into details of interest to the experts ·         Includes a detailed glossary that explains the specialized terminology and provides insight into the terminology and how it’s used.

Metal oxide semiconductors. --- Epitaxy. --- Oxide coating. --- Protective coatings --- Thin films --- Epitaxial growth --- Crystal growth --- Unipolar transistors --- Semiconductors --- Transistors --- Charge coupled devices --- Metal oxide semiconductors --- Epitaxy --- Oxide coating --- MOS (électronique) --- Épitaxie --- Couches minces --- Revêtements protecteurs --- Electronics. --- Optical materials. --- Electronics and Microelectronics, Instrumentation. --- Optical and Electronic Materials. --- Semiconductors. --- Optics --- Materials --- Electrical engineering --- Physical sciences --- Épitaxie. --- Couches minces. --- Revêtements protecteurs. --- Microelectronics. --- Electronic materials. --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electronics --- Solid state electronics --- Electronic materials --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Miniature electronic equipment --- MOS (électronique) --- Épitaxie. --- Revêtements protecteurs.

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.

Electronics and optics of solids --- Physics --- Physicochemistry --- Electronics --- Computer. Automation --- informatica --- elektronica --- fysica --- transistoren --- halfgeleiders --- fysicochemie