Narrow your search

Library

KBR (1)

KU Leuven (1)

UCLouvain (1)

ULiège (1)


Resource type

book (3)


Language

English (3)


Year
From To Submit

2002 (3)

Listing 1 - 3 of 3
Sort by

Book
Proceedings of the 5th European Workshop on Low Temperature Electronics : WOLTE 5, June 19-21, 2002, Grenoble, France
Authors: ---
Year: 2002 Publisher: [Place of publication not identified] EDP Sciences

Loading...
Export citation

Choose an application

Bookmark

Abstract


Book
Proceedings of the 5th European Workshop on Low Temperature Electronics : WOLTE 5, June 19-21, 2002, Grenoble, France
Authors: ---
Year: 2002 Publisher: [Place of publication not identified] EDP Sciences

Loading...
Export citation

Choose an application

Bookmark

Abstract

Progress in SOI structures and devices operating at extreme conditions : proceedings of the NATO Advanced Research Workshop on ..., Kyiv, Ukraine, 15-20 October 2000
Authors: --- --- --- --- --- et al.
ISBN: 140200575X 1402005768 9401003394 9781402005763 9781402005756 Year: 2002 Volume: 58 Publisher: Dordrecht ; Boston ; London Brussels Kluwer Academic Publishers NATO Scientific Affairs Division

Loading...
Export citation

Choose an application

Bookmark

Abstract

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

Listing 1 - 3 of 3
Sort by