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Semiconductors --- Ion implantation --- Semiconductor doping

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ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

Semiconductor doping. --- Doped semiconductors. --- Crystals --- Defects.

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Ion implantation --- Semiconductor doping --- Semiconductors --- Congresses

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The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials

Semiconductor doping. --- Semiconductors --- Effect of radiation on.

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Semiconductor doping --- Semiconductors --- Congresses --- Heat treatment --- Congresses