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The scope of the book are CVD (chemical vapor deposition) polymerization processes which directly translate the chemical mechanisms of traditional polymer synthesis and organic synthesis in homogeneous liquids into heterogeneous processes for the modification of solid surfaces. The book is structured into four parts, complemented by an introductory overview of the diverse process strategies for CVD of polymeric materials. The first part on the fundamentals of CVD polymers is followed by a detailed coverage of the materials chemistry of CVD polymers, including the main synthesis mechanisms and
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This thesis by Arun Haridas Choolakkal, presented at Linköping University, explores the development of a chemical vapor deposition (CVD) process for creating conformal boron carbide thin films. These films are particularly useful as neutron converter materials in solid-state neutron detectors. The research utilizes triethylboron (TEB) as a single-source CVD precursor, focusing initially on low reaction rate deposition. Experiments demonstrated highly conformal films at temperatures ≤450°C, with promising results for detector applications. The study further investigates enhancing step coverage at higher temperatures by introducing diffusion additives. The CVD process was validated on carbon nanotube membranes, confirming the potential for even deposition without inducing defects. This work is aimed at advancing materials science for improved detector performance, targeting researchers and professionals in physics and engineering.
Chemical vapor deposition. --- Boron compounds. --- Chemical vapor deposition --- Boron compounds
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This dissertation by Laurent Souqui explores the chemical vapor deposition (CVD) of B-C-N materials using organoboron compounds. It focuses on the development and understanding of sp2-BN, BxC, and BCxNy thin films. The research investigates alternative precursors like trimethylboron (TMB) and examines the gas phase and surface chemistries involved. The study covers deposition techniques, including plasma CVD, and evaluates substrate materials such as silicon and zirconium diboride. Findings highlight the potential for high aspect ratio deposition and the impact of various conditions on film growth and morphology. The work is aimed at advancing material science for applications in electronics and UV light emission.
Chemical vapor deposition. --- Boron compounds. --- Chemical vapor deposition --- Boron compounds
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This dissertation by Anders Lundskog explores the controlled growth of hexagonal GaN pyramids and InGaN quantum dots (QDs) using hot-wall metal organic chemical vapor deposition (MOCVD). The research focuses on enhancing the luminous efficiency of LEDs, addressing dislocation issues in planar heteroepitaxial structures. By embedding InGaN QDs in GaN matrices, the study demonstrates the potential for dislocation-free structures, leading to improved optical properties and novel light sources, such as single photon emitters for quantum applications. The work is mainly experimental, employing techniques like SEM, μPL, and STEM. The dissertation also discusses the impact of growth parameters on pyramid morphology and QD emission energy, contributing to advancements in semiconductor materials and LED technology.
Quantum dots. --- Chemical vapor deposition. --- Quantum dots --- Chemical vapor deposition
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This dissertation by Robin Karhu explores the chemical vapor deposition (CVD) growth of silicon carbide (SiC) for high-power and high-frequency electronic applications. It focuses on overcoming challenges in the epitaxial growth of SiC, particularly addressing issues like high background doping and basal plane dislocations. The work advances on-axis homoepitaxy techniques for 4H-SiC substrates, improving surface morphology control and thermal conductivity through isotopic enrichment. The research is significant for enhancing the performance of SiC devices in handling high voltages and currents, making it suitable for medium and high voltage applications. This study is intended for researchers and professionals in semiconductor materials and electronic engineering.
Silicon carbide. --- Chemical vapor deposition. --- Silicon carbide --- Chemical vapor deposition
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This licentiate thesis by Mewlude Imam explores the chemical vapor deposition (CVD) of boron-carbon thin films using organoboron precursors. The research focuses on developing low-temperature CVD routes for BxC films to be used in neutron detectors, considering the thermal limitations of aluminum substrates. Two organoboron precursors, triethylboron (TEB) and trimethylboron (TMB), are investigated for their effectiveness in depositing BxC films. The study includes quantum chemical calculations and plasma CVD techniques to optimize film composition, density, and hardness. The work is intended for researchers in material science and thin film technology, aiming to enhance the performance of neutron detectors.
Chemical vapor deposition. --- Boron compounds. --- Chemical vapor deposition --- Boron compounds
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This dissertation by Pitsiri Sukkaew explores the chemical vapor deposition (CVD) of Silicon Carbide (SiC), a wide bandgap semiconductor with significant potential in power, sensor, and biomedical applications. The work addresses the limitations of experimental studies focused on post-process measurements by employing quantum chemical calculations to provide insights into the growth mechanisms of SiC using CVD. The study combines computational fluid dynamics (CFD) with quantum chemical computations to determine the properties and reactions of various silicon and carbon species. The research aims to improve the understanding of the surface adsorption and gas-phase kinetics in the SiC-CVD process, thereby enhancing the modeling and optimization of SiC growth for industrial applications. This work is intended for researchers and professionals in the fields of material science, chemistry, and semiconductor technology.
Chemical vapor deposition. --- Silicon carbide. --- Chemical vapor deposition --- Silicon carbide
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