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2025 (4)

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Book
Silicon Components and Processes Self Study : Field-Effect Transistors
Authors: ---
ISBN: 9783031591938 Year: 2025 Publisher: Cham : Springer Nature Switzerland : Imprint: Springer,

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Abstract

This book is one of a series of five volumes forming an integrated, self-study course on silicon device physics, modes of operation, characterization, and fabrication. The series is based on many years of the author’s experience in academic and industrial teaching of semiconductors. The books are suitable for both class-teaching and self-study. The authors have designed the content to enable readers to be introduced gradually to semiconductors, in particular silicon components. The presentation includes many illustrations, practical examples, review questions and problems at the end of each chapter. Answers to review questions and solutions to problems will be provided for “self-check”. Complements courses covering silicon device physics, mode of components, characterization, and fabrication; Enables comprehensive, self-study in semiconductors, aimed at practicing engineers or university students; Includes many illustrations, practical examples, review questions and problems at the end of each chapter.


Book
Silicon Components and Processes Self Study : Field-Effect Transistors
Authors: ---
ISBN: 3031591933 Year: 2025 Publisher: Cham : Springer Nature Switzerland : Imprint: Springer,

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Abstract

This book is one of a series of five volumes forming an integrated, self-study course on silicon device physics, modes of operation, characterization, and fabrication. The series is based on many years of the author’s experience in academic and industrial teaching of semiconductors. The books are suitable for both class-teaching and self-study. The authors have designed the content to enable readers to be introduced gradually to semiconductors, in particular silicon components. The presentation includes many illustrations, practical examples, review questions and problems at the end of each chapter. Answers to review questions and solutions to problems will be provided for “self-check”. Complements courses covering silicon device physics, mode of components, characterization, and fabrication; Enables comprehensive, self-study in semiconductors, aimed at practicing engineers or university students; Includes many illustrations, practical examples, review questions and problems at the end of each chapter.


Book
Fundamentals and Principles of Electromagnetic Wave Absorbers : From Theory, Design, and Materials to Measurement
Author:
ISBN: 9819764777 Year: 2025 Publisher: Singapore : Springer,

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This book consists of three main parts: fundamental theory, design principles and methodology, and potential materials that can be applied to EM wave absorbers. In the theory part, this book provides the basics of electromagnetism, circuit and transmission line theory, EM wave propagation and reflection, and complex permittivity and permeability by electric polarization and magnetization of materials. In the design part, design methods are explained for various types of EM wave absorbers based on equivalent circuit models and simulation technologies. Starting from the traditional resonance-type absorber, this book reviews the latest metamaterial and frequency selection surface (FSS) absorbers with more advanced design techniques. Recent research results are also included associated with how to design the ultrawide-bandwidth absorbers through multilayering FSSs or shape-control of lossy materials. In the materials section, various lossy materials are reviewed that can be used as EM wave absorbers, including conductive materials, magnetic materials, dielectric materials, core-shell materials, fiber-reinforced composite materials, and metamaterials or metasurfaces. Literature reviews on their electromagnetic properties and EM wave absorption performance are also presented. Finally, the methods and principles for measuring the high-frequency properties (complex permittivity and permeability) and EM wave absorption are described.


Book
Modeling of AlGaN/GaN High Electron Mobility Transistors
Authors: ---
ISBN: 9789819775064 Year: 2025 Publisher: Singapore : Springer Nature Singapore : Imprint: Springer,

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This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.

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