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Energies SI Book "Selected Papers from the ICEUBI2019 – International Congress on Engineering – Engineering for Evolution", groups six papers into fundamental engineering areas: Aeronautics and Astronautics, and Electrotechnical and Mechanical Engineering. ICEUBI—International Congress on Engineering is organized every two years by the Engineering Faculty of Beira Interior University, Portugal, promoting engineering in society through contact among researchers and practitioners from different fields of engineering, and thus encouraging the dissemination of engineering research, innovation, and development. All selected papers are interrelated with energy topics (fundamentals, sources, exploration, conversion, and policies), and provide relevant data for academics, research-focused practitioners, and policy makers.
Technology: general issues --- HVAC --- water-cooled condenser --- air-cooled condenser --- evaporative --- TWI --- turbulence modeling --- supercritical injection --- Liquid Rocket Engines --- energy saving and efficiency --- aerodynamic coefficients --- propulsive efficiency --- bioenergetics --- biomimetics --- grid-tied inverter --- grey wolf optimizer --- PR controllers --- LCL filter --- passive damping --- propeller --- aircraft --- turboprop --- flight efficiency --- flight speed --- hydro-thermal coordination --- Lagrangian relaxation --- Lagrangian dual problem --- Lagrange multipliers --- subgradient methods --- step-size update algorithm
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Energies SI Book "Selected Papers from the ICEUBI2019 – International Congress on Engineering – Engineering for Evolution", groups six papers into fundamental engineering areas: Aeronautics and Astronautics, and Electrotechnical and Mechanical Engineering. ICEUBI—International Congress on Engineering is organized every two years by the Engineering Faculty of Beira Interior University, Portugal, promoting engineering in society through contact among researchers and practitioners from different fields of engineering, and thus encouraging the dissemination of engineering research, innovation, and development. All selected papers are interrelated with energy topics (fundamentals, sources, exploration, conversion, and policies), and provide relevant data for academics, research-focused practitioners, and policy makers.
HVAC --- water-cooled condenser --- air-cooled condenser --- evaporative --- TWI --- turbulence modeling --- supercritical injection --- Liquid Rocket Engines --- energy saving and efficiency --- aerodynamic coefficients --- propulsive efficiency --- bioenergetics --- biomimetics --- grid-tied inverter --- grey wolf optimizer --- PR controllers --- LCL filter --- passive damping --- propeller --- aircraft --- turboprop --- flight efficiency --- flight speed --- hydro-thermal coordination --- Lagrangian relaxation --- Lagrangian dual problem --- Lagrange multipliers --- subgradient methods --- step-size update algorithm
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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity
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Energies SI Book "Selected Papers from the ICEUBI2019 – International Congress on Engineering – Engineering for Evolution", groups six papers into fundamental engineering areas: Aeronautics and Astronautics, and Electrotechnical and Mechanical Engineering. ICEUBI—International Congress on Engineering is organized every two years by the Engineering Faculty of Beira Interior University, Portugal, promoting engineering in society through contact among researchers and practitioners from different fields of engineering, and thus encouraging the dissemination of engineering research, innovation, and development. All selected papers are interrelated with energy topics (fundamentals, sources, exploration, conversion, and policies), and provide relevant data for academics, research-focused practitioners, and policy makers.
Technology: general issues --- HVAC --- water-cooled condenser --- air-cooled condenser --- evaporative --- TWI --- turbulence modeling --- supercritical injection --- Liquid Rocket Engines --- energy saving and efficiency --- aerodynamic coefficients --- propulsive efficiency --- bioenergetics --- biomimetics --- grid-tied inverter --- grey wolf optimizer --- PR controllers --- LCL filter --- passive damping --- propeller --- aircraft --- turboprop --- flight efficiency --- flight speed --- hydro-thermal coordination --- Lagrangian relaxation --- Lagrangian dual problem --- Lagrange multipliers --- subgradient methods --- step-size update algorithm --- HVAC --- water-cooled condenser --- air-cooled condenser --- evaporative --- TWI --- turbulence modeling --- supercritical injection --- Liquid Rocket Engines --- energy saving and efficiency --- aerodynamic coefficients --- propulsive efficiency --- bioenergetics --- biomimetics --- grid-tied inverter --- grey wolf optimizer --- PR controllers --- LCL filter --- passive damping --- propeller --- aircraft --- turboprop --- flight efficiency --- flight speed --- hydro-thermal coordination --- Lagrangian relaxation --- Lagrangian dual problem --- Lagrange multipliers --- subgradient methods --- step-size update algorithm
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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- n/a
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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Technology: general issues --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a
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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- n/a
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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a
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Delay, difference, functional, fractional, and partial differential equations have many applications in science and engineering. In this Special Issue, 29 experts co-authored 10 papers dealing with these subjects. A summary of the main points of these papers follows:Several oscillation conditions for a first-order linear differential equation with non-monotone delay are established in Oscillation Criteria for First Order Differential Equations with Non-Monotone Delays, whereas a sharp oscillation criterion using the notion of slowly varying functions is established in A Sharp Oscillation Criterion for a Linear Differential Equation with Variable Delay. The approximation of a linear autonomous differential equation with a small delay is considered in Approximation of a Linear Autonomous Differential Equation with Small Delay; the model of infection diseases by Marchuk is studied in Around the Model of Infection Disease: The Cauchy Matrix and Its Properties. Exact solutions to fractional-order Fokker–Planck equations are presented in New Exact Solutions and Conservation Laws to the Fractional-Order Fokker–Planck Equations, and a spectral collocation approach to solving a class of time-fractional stochastic heat equations driven by Brownian motion is constructed in A Collocation Approach for Solving Time-Fractional Stochastic Heat Equation Driven by an Additive Noise. A finite difference approximation method for a space fractional convection-diffusion model with variable coefficients is proposed in Finite Difference Approximation Method for a Space Fractional Convection–Diffusion Equation with Variable Coefficients; existence results for a nonlinear fractional difference equation with delay and impulses are established in On Nonlinear Fractional Difference Equation with Delay and Impulses. A complete Noether symmetry analysis of a generalized coupled Lane–Emden–Klein–Gordon–Fock system with central symmetry is provided in Oscillation Criteria for First Order Differential Equations with Non-Monotone Delays, and new soliton solutions of a fractional Jaulent soliton Miodek system via symmetry analysis are presented in New Soliton Solutions of Fractional Jaulent-Miodek System with Symmetry Analysis.
integro–differential systems --- Cauchy matrix --- exponential stability --- distributed control --- delay differential equation --- ordinary differential equation --- asymptotic equivalence --- approximation --- eigenvalue --- oscillation --- variable delay --- deviating argument --- non-monotone argument --- slowly varying function --- Crank–Nicolson scheme --- Shifted Grünwald–Letnikov approximation --- space fractional convection-diffusion model --- variable coefficients --- stability analysis --- Lane-Emden-Klein-Gordon-Fock system with central symmetry --- Noether symmetries --- conservation laws --- differential equations --- non-monotone delays --- fractional calculus --- stochastic heat equation --- additive noise --- chebyshev polynomials of sixth kind --- error estimate --- fractional difference equations --- delay --- impulses --- existence --- fractional Jaulent-Miodek (JM) system --- fractional logistic function method --- symmetry analysis --- lie point symmetry analysis --- approximate conservation laws --- approximate nonlinear self-adjointness --- perturbed fractional differential equations
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Ocean Structures subjected to actions of ocean waves require safety inspection as they protect human environment and everyday lives. Increasing uses of ocean environment have brought active research activities continuously. The newly developed technology of ocean energy even pushed the related needs forward one more step. This Special Issue focuses on Analysis of Interactions between wave structures and ocean waves. Although ocean structures may cover various practical and/or conceptual types, we hope in the years to come, the state-of-the-art applications in wave and structure interactions and/or progress review and future developments could be included. There are fifteen papers published in the Special issue. A brief description includes: Lee et al. [1] presented a concept of a water column type wave power converter. Li et al. [2] considered submerged breakwaters. Lin et al. [3] studied an ocean current turbine system. Thiagarajan and Moreno [4] investigated oscillating heave plates in wind turbines. Chiang et al. [5] proposed an actuator disk model. Tseng et al. [6] investigated Bragg reflections of periodic surface-piercing submerged breakwaters. Lee et al. [7] analyzed caisson structures with a wave power conversion system installed. Yeh et al. [8] reported motion reduction in offshore wind turbines. Wu and Hsiao [9] considered submerged slotted barriers. Tang et al. [10] studied floating platforms with fishnets. Chen et al. [11] calculated mooring drags of underwater floating structures with moorings. Jeong et al. [12] estimated the motion performance of light buoys using ecofriendly and lightweight materials. Zhang et al. [13] considered vibrations of deep-sea risers. On the other hand, Shugan et al. [14] studied the effects of plastic coating on sea surfaces.
Technology: general issues --- deep-sea riser --- top tension --- vortex-induced vibration --- numerical simulation --- experiment --- light buoy --- motion performance in waves --- potential-based simulations --- viscous damping coefficients --- free decay tests --- computational fluid dynamics --- analytic solution --- water waves --- underwater floating structure --- mooring forces --- interaction --- floating platform --- fishnet mesh size --- frequency-domain --- time-domain --- nonlinear waves --- BEM --- solitary wave --- submerged breakwater --- slotted barrier --- PIV --- RANS model --- motion reduction control --- renewable energy --- TLD --- offshore wind turbine --- structural safety --- breakwater design --- wave energy --- wave power converting system --- caisson breakwater application --- eigenfunction matching method --- oblique wave --- Bragg reflection --- step approximation --- surface-piercing structure --- periodic bottom --- surface waves --- wave breaker --- elastic plate --- power prediction --- capacity factor --- actuator disk --- wind farm --- heave plate --- free surface effect --- floating offshore wind turbine --- hydrodynamic coefficients --- added mass --- damping coefficient --- forced oscillation in waves --- Keulegan Carpenter number --- stability --- ocean current power system --- surface type --- buoyance platform --- mooring foundation --- particle image velocimetry --- submerged obstacle --- undulating breakwater --- rectangular breakwater --- vortex energy --- offshore wind power --- template structure system --- oscillating water column --- typhoon --- gust --- extreme wind --- aerodynamic load --- deep-sea riser --- top tension --- vortex-induced vibration --- numerical simulation --- experiment --- light buoy --- motion performance in waves --- potential-based simulations --- viscous damping coefficients --- free decay tests --- computational fluid dynamics --- analytic solution --- water waves --- underwater floating structure --- mooring forces --- interaction --- floating platform --- fishnet mesh size --- frequency-domain --- time-domain --- nonlinear waves --- BEM --- solitary wave --- submerged breakwater --- slotted barrier --- PIV --- RANS model --- motion reduction control --- renewable energy --- TLD --- offshore wind turbine --- structural safety --- breakwater design --- wave energy --- wave power converting system --- caisson breakwater application --- eigenfunction matching method --- oblique wave --- Bragg reflection --- step approximation --- surface-piercing structure --- periodic bottom --- surface waves --- wave breaker --- elastic plate --- power prediction --- capacity factor --- actuator disk --- wind farm --- heave plate --- free surface effect --- floating offshore wind turbine --- hydrodynamic coefficients --- added mass --- damping coefficient --- forced oscillation in waves --- Keulegan Carpenter number --- stability --- ocean current power system --- surface type --- buoyance platform --- mooring foundation --- particle image velocimetry --- submerged obstacle --- undulating breakwater --- rectangular breakwater --- vortex energy --- offshore wind power --- template structure system --- oscillating water column --- typhoon --- gust --- extreme wind --- aerodynamic load
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