Narrow your search

Library

KU Leuven (148)

ULiège (146)

Odisee (144)

Thomas More Kempen (144)

Thomas More Mechelen (144)

UCLL (144)

UGent (144)

VIVES (144)

ULB (143)

KBC (27)

More...

Resource type

book (147)

periodical (1)


Language

English (146)

Dutch (1)

Italian (1)


Year
From To Submit

2018 (148)

Listing 1 - 10 of 148 << page
of 15
>>
Sort by

Book
2018 IEEE East-West Design & Test Symposium : 14-17 September 2018, Kazan, Russia
Authors: ---
ISBN: 1538657104 1538657112 Year: 2018 Publisher: Piscataway, New Jersey : Institute of Electrical and Electronics Engineers,

Loading...
Export citation

Choose an application

Bookmark

Abstract


Book
2018 IEEE 21st International Symposium on Design and Diagnostics of Electronic Circuits & Systems : 25-27 April 2018, Budapest, Hungary
Authors: ---
ISBN: 1538657546 1538657554 Year: 2018 Publisher: Piscataway, New Jersey : Institute of Electrical and Electronics Engineers,

Loading...
Export citation

Choose an application

Bookmark

Abstract


Periodical
Elektorlabs magazine
ISSN: 25900765 22139303 00135895 Year: 2018 Publisher: Susteren Elektor International Media B.V.


Book
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Authors: ---
ISBN: 9811065500 9811065497 Year: 2018 Publisher: Singapore : Springer Singapore : Imprint: Springer,

Loading...
Export citation

Choose an application

Bookmark

Abstract

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.


Book
5G and E-Band Communication Circuits in Deep-Scaled CMOS
Authors: ---
ISBN: 3319726463 3319726455 Year: 2018 Publisher: Cham : Springer International Publishing : Imprint: Springer,

Loading...
Export citation

Choose an application

Bookmark

Abstract

This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option. Discusses the major implication of CMOS technology scaling on mm-Wave low power circuit design; Includes detailed design techniques, layout implementations and design examples of state-of-the-art  mm-Wave broadband quadrature oscillators, frequency dividers, low-noise amplifiers, downconverters, and highly-linear power amplifiers; Provide a reference work for neophytes as well as more experienced mm-Wave design engineers.


Book
VLSI Design: Circuits, Systems and Applications : Select Proceedings of ICNETS2, Volume V
Authors: --- ---
ISBN: 9811072515 9811072507 Year: 2018 Publisher: Singapore : Springer Singapore : Imprint: Springer,

Loading...
Export citation

Choose an application

Bookmark

Abstract

This book gathers a collection of papers by international experts presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2017), which cover key developments in the field of electronics and communication engineering. ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including relevant nano/micro materials and devices. This book showcases the latest research in very-large-scale integration (VLSI) Design: Circuits, Systems and Applications, making it a valuable resource for all researchers, professionals, and students working in the core areas of electronics and their applications, especially in digital and analog VLSI circuits and systems.


Book
2018 IEEE 27th Asian Test Symposium : 15-18 October 2018, Hefei, China
Authors: ---
ISBN: 1538694662 1538694670 Year: 2018 Publisher: Piscataway, New Jersey : Institute of Electrical and Electronics Engineers,


Book
Introduction to wireless communication circuits
Author:
ISBN: 8770220042 8793609701 9788770220040 9788793609709 879360971X 9788793609716 100079928X 1003338704 Year: 2018 Publisher: Gistrup, Denmark River Publishers


Book
Physics of Semiconductor Devices
Author:
ISBN: 9783319631547 Year: 2018 Publisher: Cham : Springer International Publishing : Imprint: Springer,

Loading...
Export citation

Choose an application

Bookmark

Abstract

This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation.  Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation.  Examples are based on silicon due to its industrial importance.  Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices. Provides a comprehensive textbook describing the physics of semiconductors, from fundamentals to applications; Proceeds from first principles to description of actual devices’ behavior; Written to be accessible, including mathematical derivations and explicit calculations, without being wordy; This new edition includes numerous new exercises and explanatory figures, as well as a variety of new material and improvements to the existing content.


Book
ASIC/SoC Functional Design Verification : A Comprehensive Guide to Technologies and Methodologies
Author:
ISBN: 3319594184 3319594176 Year: 2018 Publisher: Cham : Springer International Publishing : Imprint: Springer,

Loading...
Export citation

Choose an application

Bookmark

Abstract

This book describes in detail all required technologies and methodologies needed to create a comprehensive, functional design verification strategy and environment to tackle the toughest job of guaranteeing first-pass working silicon The author outlines all of the verification sub-fields at a high level, with just enough depth to allow a manager/decision maker or an engineer to grasp the field which can then be pursued in detail with the provided references. He describes in detail industry standard technologies such as UVM (Universal Verification Methodology), SVA (SystemVerilog Assertions), SFC (SystemVerilog Functional Coverage), CDV (Coverage Driven Verification), Low Power Verification (Unified Power Format UPF), AMS (Analog Mixed Signal) verification, Virtual Platform TLM2.0/ESL (Electronic System Level) methodology, Static Formal Verification, Logic Equivalency Check (LEC), Hardware Acceleration, Hardware Emulation, Hardware/Software Co-verification, Power Performance Area (PPA) analysis on a virtual platform, Reuse Methodology from Algorithm/ESL to RTL, and other overall methodologies.

Listing 1 - 10 of 148 << page
of 15
>>
Sort by