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In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the ""surface states"" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Field-effect transistors. --- FETs (Transistors) --- Unipolar transistors --- Transistors --- Engineering --- Physical Sciences --- Engineering and Technology --- Electrical and Electronic Engineering --- Electronic Circuits
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Molybdenum disulfide. --- Field-effect transistors. --- Electron mobility.
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The discovery of monolayer graphene led to a Nobel Prize in Physics being awarded in 2010. This has stimulated further research on a wide variety of two-dimensional (2D) layered materials. The coupling of metallic graphene, semiconducting 2D transition metal dichalcogenides (TMDCs) and black phosphorus have attracted a tremendous amount of interest in new electronic and optoelectronic applications. Together with other 2D materials, such as the wide band gap boron nitride nanosheets (BNNSs), all these 2D materials have led towards an emerging field of van der Waal 2D heterostructures. The papers in this book were originally published by Electronics (MDPI) in a Special Issue on “Two-Dimensional Electronics and Optoelectronics”. The book consists of eight papers, including two review articles, covering various pertinent and fascinating issues concerning 2D materials and devices. Further, the potential and the challenges of 2D materials are discussed, which provide up to date guidance for future research and development.
WSe2 --- integrated circuits --- MoS2 --- light-emitting diodes --- heterojunctions --- graphene --- MoSe2 --- van der Waal heterostructures --- MoTe2 --- photovoltaic cells --- lasers --- photodetectors --- transition metal dichalcogenides --- ReS2 --- field effect transistors --- WS2 --- TMDCs --- two-dimensional materials --- heterostructures --- ReSe2
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This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
Physics. --- Phase transitions (Statistical physics). --- Semiconductors. --- Electronic circuits. --- Electronics. --- Microelectronics. --- Electronic Circuits and Devices. --- Electronics and Microelectronics, Instrumentation. --- Phase Transitions and Multiphase Systems. --- Metal oxide semiconductors. --- Unipolar transistors --- Semiconductors --- Transistors --- Charge coupled devices --- Electrical engineering --- Physical sciences --- Phase changes (Statistical physics) --- Phase transitions (Statistical physics) --- Phase rule and equilibrium --- Statistical physics --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Solid state electronics --- Materials
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This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.
Physics. --- Surfaces (Physics). --- Interfaces (Physical sciences). --- Thin films. --- Electronic circuits. --- Nanotechnology. --- Surface and Interface Science, Thin Films. --- Electronic Circuits and Devices. --- Nanotechnology and Microengineering. --- Metal oxide semiconductor field-effect transistors. --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Engineering. --- Construction --- Industrial arts --- Technology --- Molecular technology --- Nanoscale technology --- High technology --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Films, Thin --- Solid film --- Solid state electronics --- Solids --- Surfaces (Technology) --- Coatings --- Thick films --- Surface chemistry --- Surfaces (Physics) --- Physics
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