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ISBN: 3035730423 9783035730425 3035710422 9783035710427 Year: 2015 Publisher: Pfaffikon Trans Tech
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ISBN: 9789176859193 Year: 2015 Publisher: Linkopings Universitet
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This dissertation by Ian D. Booker focuses on the study of silicon carbide (SiC) for use in high-power bipolar devices, particularly examining the deep levels that affect charge carrier lifetime. The research investigates both intrinsic and extrinsic defects in SiC, using advanced spectroscopic techniques like deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Key findings include the identification of recombination centers such as the intrinsic carbon vacancy Z1/2 and extrinsic defects caused by transition metals like iron. The work also explores the effects of boron contamination and oxidation-induced deep levels, contributing to the understanding of how these defects impact the performance of SiC devices. This research is intended for scientists and engineers in the field of semiconductor materials, offering insights into the optimization of SiC for enhanced electrical performance.
Silicon carbide. --- Semiconductors. --- Silicon carbide --- Semiconductors
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ISBN: 3038269433 9783038269434 9783038354789 Year: 2015 Publisher: Switzerland
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Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effec
Silicon carbide --- Silicon-carbide thin films --- Thin films --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Electric properties
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