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book (7)


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English (6)

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2015 (7)

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Book
IEEE Std C57.125-1991 : IEEE Guide for Failure Investigation, Documentation, and Analysis for Power Transformers and Shunt Reactors
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ISBN: 073819901X 0738114189 Year: 2015 Publisher: Piscataway, NJ : IEEE,

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Abstract

A procedure to be used to perform a failure analysis is recommended. The procedure is primarily focused on power transformers used on electric utility systems, although it may be used for an investigation into any ac transformer failure. This document provides a methodology by which the most probable cause of any particular transformer failure may be determined. This document is also intended to encourage the establishment of routine and uniform data collection procedures, consistency of nomenclature and compatibility with similar efforts by other organizations, and cooperative efforts by users and manufacturers during the failure analysis.


Book
The IGBT device : physics, design and applications of the insulated gate bipolar transistor
Author:
ISBN: 1455731536 1455731439 133614923X 9781455731534 9781455731435 9781455731435 Year: 2015 Publisher: Oxford, England ; Waltham, Massachusetts : William Andrew,

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The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engin


Book
IEEE Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers
Author:
ISBN: 0738196444 Year: 2015 Publisher: New York, N.Y. : IEEE,

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This document includes a definition of the concept of modulation frequencies for light-emitting diodes (LEDs), a discussion on their applications to LED lighting, a description of LED lighting applications in which modulation frequencies pose possible health risks to users, a discussion of the dimming of LEDs by modulating the frequency of driving currents-voltage, and recommendations for modulation frequencies (flicker) for LED lighting and dimming applications to help protect against known potential adverse health effects.


Book
FinFET modeling for IC simulation and design
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ISBN: 0124200850 0124200311 1336206624 9780124200852 9780124200319 Year: 2015 Publisher: London, UK

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Book
Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
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ISBN: 9783662456675 3662456664 9783662456668 3662456672 Year: 2015 Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer,

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The book summarizes Ting Lei’s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication. The research results have previously scattered in many important journals and conferences worldwide. The book is likely to be of interest to university researchers, engineers and graduate students in materials sciences and chemistry who wish to learn some principles, strategy, and applications of polymer FETs.


Book
Composants électroniques : aide-mémoire
Author:
ISBN: 9782100721436 2100721437 Year: 2015 Publisher: Paris : Dunod : l'Usine nouvelle,


Book
Short-Channel Organic Thin-Film Transistors : Fabrication, Characterization, Modeling and Circuit Demonstration
Author:
ISBN: 9783319188966 331918895X 9783319188959 3319188968 Year: 2015 Publisher: Cham : Springer International Publishing : Imprint: Springer,

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This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. Plastic electronics based on organic thin-film transistors (OTFTs) pave the way for cheap, flexible and large-area products. Over the past few years, OTFTs have undergone remarkable advances in terms of reliability, performance and scale of integration. Many factors contribute to the allure of this technology; the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned. Furthermore, the OTFTs employ an ultra-thin gate dielectric that provides a sufficiently high capacitance to enable the transistors to operate at voltages as low as 3 V. The critical challenges in this development are the subtle mechanisms that govern the properties of aggressively scaled OTFTs. These mechanisms, dictated by device physics, are well described and implemented into circuit-design tools to ensure adequate simulation accuracy.

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