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This licentiate thesis by Marlene Mühlbacher focuses on the study of titanium nitride (TiN) films as diffusion barrier layers in microelectronic devices. The research aims to understand diffusion processes that can lead to the failure of these barrier layers. The study involves the growth of model TiN barriers with a copper overlayer using reactive magnetron sputtering, followed by various annealing treatments to induce diffusion. High-resolution techniques such as transmission electron microscopy (TEM) and atom probe tomography (APT) are employed to investigate the structural and chemical properties of the layers. The findings demonstrate the effectiveness of single-crystal TiN barriers at high temperatures and provide insights into the atomic-scale diffusion mechanisms.

Titanium nitride. --- Microelectronics. --- Titanium nitride --- Microelectronics