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Integrated circuits --- Metal oxide semiconductors, Complementary --- Semiconductor storage devices --- Semiconductor memories --- Computer storage devices --- Semiconductors --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Very large scale integration
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Metal oxide semiconductors, Complementary --- Semiconductor storage devices --- Integrated circuits --- Semiconductor memories --- Computer storage devices --- Semiconductors --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits
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CMOS chips are becoming increasingly important in computer circuitry. They have been widely used during the past decade, and they will continue to grow in popularity in those application areas that demand high performance. Challenging the prevailing opinion that circuit simulation can reveal all problems in CMOS circuits, Masakazu Shoji maintains that simulation cannot completely remove the often costly errors that occur in circuit design. To address the failure modes of these circuits more fully, he presents a new approach to CMOS circuit design based on his systematizing of circuit design error and his unique theory of CMOS digital circuit operation. In analyzing CMOS digital circuits, the author focuses not on effects originating from the characteristics of the device (MOSFET) but on those arising from their connection. This emphasis allows him to formulate a powerful but ultimately simple theory explaining the effects of connectivity by using a concept of the states of the circuits, called microstates. Shoji introduces microstate sequence diagrams that describe the state changes (or the circuit connectivity changes), and he uses his microstate theory to analyze many of the conventional CMOS digital circuits. These analyses are practically all in closed-form, and they provide easy physical interpretation of the circuit's working mechanisms, the parametric dependence of performance, and the circuit's failure modes.Originally published in 1992.The Princeton Legacy Library uses the latest print-on-demand technology to again make available previously out-of-print books from the distinguished backlist of Princeton University Press. These editions preserve the original texts of these important books while presenting them in durable paperback and hardcover editions. The goal of the Princeton Legacy Library is to vastly increase access to the rich scholarly heritage found in the thousands of books published by Princeton University Press since its founding in 1905.
Metal oxide semiconductors, Complementary. --- Semiconductors --- Digital integrated circuits --- Failures in semiconductors --- System failures (Engineering) --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Failures. --- Design and construction --- Data processing.
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Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics or circuit engineering.
Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Metal oxide semiconductors, Complementary. --- Analog electronic systems. --- Analog electronic devices --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Engineering. --- Electronic circuits. --- Electronics. --- Microelectronics. --- Optical materials. --- Electronic materials. --- Electronics and Microelectronics, Instrumentation. --- Optical and Electronic Materials. --- Electronic Circuits and Devices. --- Electronic systems --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Optics --- Materials --- Electrical engineering --- Physical sciences --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Electronic materials --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Nanoelectronics. --- Electric filters.
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Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.
Engineering --- Systems engineering --- Optical materials --- Surfaces (Physics) --- Physics --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Microelectromechanical systems. --- Metal oxide semiconductors, Complementary. --- Polycrystals. --- Polycrystalline solids --- Polycrystalline substances --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- MEMS (Microelectromechanical systems) --- Micro-electro-mechanical systems --- Micro-machinery --- Microelectromechanical devices --- Micromachinery --- Micromachines --- Micromechanical devices --- Micromechanical systems --- Physics. --- Electronic circuits. --- Nanotechnology. --- Optical materials. --- Electronic materials. --- Materials science. --- Electronic Circuits and Devices. --- Circuits and Systems. --- Optical and Electronic Materials. --- Nanotechnology and Microengineering. --- Characterization and Evaluation of Materials. --- Material science --- Physical sciences --- Electronic materials --- Optics --- Materials --- Molecular technology --- Nanoscale technology --- High technology --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Natural philosophy --- Philosophy, Natural --- Dynamics --- Crystals --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Electromechanical devices --- Microtechnology --- Mechatronics --- Systems engineering. --- Engineering. --- Surfaces (Physics). --- Surface chemistry --- Surfaces (Technology) --- Construction --- Industrial arts --- Technology --- Engineering systems --- System engineering --- Industrial engineering --- System analysis --- Design and construction
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This book describes the design of fully digital multistandard transmitter front-ends which can directly drive one or more switching power amplifiers, thus eliminating all other analog components. After reviewing different architectures, the authors focus on polar architectures using pulse width modulation (PWM), which are entirely based on unclocked delay lines and other continuous-time digital hardware. As a result, readers are enabled to shift accuracy concerns from the voltage domain to the time domain, to coincide with submicron CMOS technology scaling. The authors present different architectural options and compare them, based on their effect on the signal and spectrum quality. Next, a high-level theoretical analysis of two different PWM-based architectures – baseband PWM and RF PWM – is made. On the circuit level, traditional digital components and design techniques are revisited from the point of view of continuous-time digital circuits. Important design criteria are identified and different solutions are presented, along with their advantages and disadvantages. Finally, two chips designed in nanometer CMOS technologies are described, along with measurement results for validation. · Describes the design of multistandard digital transmitters and/or continuous-time digital circuits, including theoretical models and adapted implementations of digital building blocks; · Uses a top-down approach, moving from the architectural level, via mathematical models and high-level simulations, down to circuit-level implementation aspects, including parasitic capacitances and variability; · Applies techniques described to the design of two Ghz-range multistandard transmitters.
Telegraph, Wireless. --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Metal oxide semiconductors, Complementary. --- Pulse-duration modulation. --- Radio frequency integrated circuits. --- RFICs (Integrated circuits) --- Pulse-length modulation --- Pulse-width modulation --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Engineering. --- Electronics. --- Microelectronics. --- Electronic circuits. --- Circuits and Systems. --- Electronics and Microelectronics, Instrumentation. --- Signal, Image and Speech Processing. --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electrical engineering --- Physical sciences --- Construction --- Industrial arts --- Technology --- Integrated circuits --- Radio circuits --- Pulse modulation (Electronics) --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Systems engineering. --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Signal processing. --- Image processing. --- Speech processing systems. --- Computational linguistics --- Electronic systems --- Information theory --- Modulation theory --- Oral communication --- Speech --- Telecommunication --- Singing voice synthesizers --- Pictorial data processing --- Picture processing --- Processing, Image --- Imaging systems --- Optical data processing --- Processing, Signal --- Information measurement --- Signal theory (Telecommunication) --- Digital integrated circuits.
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