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Development of gate and base drive using SiC junction field effect transistors
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Year: 2008 Publisher: Adelphi, Md. : Army Research Laboratory,

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Book
The physics and modeling of MOSFETS
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ISBN: 1281960896 9786611960896 9812812059 9789812812056 9789812568649 9812568646 9781281960894 6611960899 Year: 2008 Publisher: Singapore Hackensack, N.J. World Scientific Pub.

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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.


Book
CMOS : circuit design, layout, and simulation.
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ISBN: 9780470229415 Year: 2008 Publisher: Hoboken Wiley

Electrical engineering : principles and applications /.
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ISBN: 0131989227 9780131989221 0132066920 9780132066921 0136138837 0136138845 9780136138839 9780136138846 Year: 2008 Publisher: Upper Saddle River Pearson Prentice Hall

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FinFETs and Other Multi-Gate Transistors
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ISBN: 1281087637 9786611087630 0387717528 038771751X 1441944095 9780387717517 9780387717524 Year: 2008 Publisher: Boston, MA Springer Science+Business Media, LLC

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FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known. FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.

ESD protection device and circuit design for advanced CMOS technologies
Authors: --- ---
ISBN: 1281397946 9786611397944 1402083017 1402083009 9048178363 Year: 2008 Publisher: [Dordrecht] : Springer,

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The challenges associated with the design and implementation of Electrostatic Discharge (ESD) protection circuits are becoming increasingly complex as technology is scaled well into nano-metric regime. Traditional approaches of ESD design may not be adequate as the ESD damages occur at successively lower voltages in nano-metric dimensions. There are several challenges that must be met in order to design robust ESD circuits today. Due to technology scaling and proliferation of automated handling, ESD failures in ICs caused by Charged Device Model (CDM) are increasing. CDM discharges can cause latent damages which could degrade and eventually lead to definite failures in the ICs. The ESD protection design for current and future sub-65nm CMOS circuits is a challenge for high I/O count, multiple power domains and flip-chip products. ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results demonstrates its strengths.

Keywords

Integrated circuits --- Electronic apparatus and appliances --- Electric discharges. --- Metal oxide semiconductors, Complementary --- Metal oxide semiconductor field-effect transistors. --- Protection. --- Design and construction. --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Discharges (Electricity) --- Electricity --- Electrostatic discharges --- Electrostatics --- Nuclear physics --- Electric action of points --- Photoelectricity --- Electronic packaging --- Chips (Electronics) --- Circuits, Integrated --- Computer chips --- Microchips --- Electronic circuits --- Microelectronics --- Discharges --- Electronics. --- Systems engineering. --- Optical materials. --- Electronics and Microelectronics, Instrumentation. --- Circuits and Systems. --- Optical and Electronic Materials. --- Solid State Physics. --- Spectroscopy and Microscopy. --- Electrical engineering --- Physical sciences --- Optics --- Materials --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Microelectronics. --- Electronic circuits. --- Electronic materials. --- Solid state physics. --- Spectroscopy. --- Microscopy. --- Analysis, Microscopic --- Light microscopy --- Micrographic analysis --- Microscope and microscopy --- Microscopic analysis --- Optical microscopy --- Analysis, Spectrum --- Spectra --- Spectrochemical analysis --- Spectrochemistry --- Spectrometry --- Spectroscopy --- Chemistry, Analytic --- Interferometry --- Radiation --- Wave-motion, Theory of --- Absorption spectra --- Light --- Spectroscope --- Physics --- Solids --- Electronic materials --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Qualitative --- Analytical chemistry


Periodical
Active and passive electronic components.
ISSN: 08827516 15635031 Year: 2008 Publisher: New York, NY : [Hoboken, NJ] : Hindawi Publ., 2008- John Wiley & Sons Ltd.


Book
Semiconductor Device Physics and Design
Authors: ---
ISBN: 1402064810 1402064802 Year: 2008 Publisher: Dordrecht : Springer Netherlands : Imprint: Springer,

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Semiconductor Device Physics and Design provides a fresh and unique teaching tool. Over the last decade device performances are driven by new materials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based heterostructures. New physics based on polar charges and polar interfaces has become important as a result of the nitrides. Nitride based devices are now used for high power applications and in lighting and display applications. For students to be able to participate in this exciting arena, a lot of physics, device concepts, heterostructure concepts and materials properties need to be understood. It is important to have a textbook that teaches students and practicing engineers about all these areas in a coherent manner. Semiconductor Device Physics and Design starts out with basic physics concepts including the physics behind polar heterostructures and strained heterostructures. Important devices ranging from p-n diodes to bipolar and field effect devices are then discussed. An important distinction users will find in this book is the discussion presented on device needs from the perspective of various technologies. For example, how much gain is needed in a transistor, how much power, what kind of device characteristics is needed? Not surprisingly the needs depend upon applications. The needs of an A/D or D/A converter will be different from that of an amplifier in a cell phone. Similarly the diodes used in a laptop will place different requirements on the device engineer than diodes used in a mixer circuit. By relating device design to device performance and then relating device needs to system use the student can see how device design works in real world. < Semiconductor Device Physics and Design is comprehensive without being overwhelming. The focus was to make this a useful text book so that the information contained is cohesive without including all aspects of device physics. The lesson plans demonstrated how this book could be used in a 1 semester or 2 quarter sequence.

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