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Field-effect transistors --- Nanostructures --- Quantum electronics

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Field-effect transistors --- Radio frequency oscillators --- Mathematical models

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A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required

Metal oxide semiconductor field-effect transistors. --- Integrated circuits --- Chips (Electronics) --- Circuits, Integrated --- Computer chips --- Microchips --- Electronic circuits --- Microelectronics --- Very large scale integration of circuits --- VLSI circuits --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Very large scale integration. --- Very large scale integration --- Computer simulation.

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Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.

Engineering. --- Electronics. --- Microelectronics. --- Electronics and Microelectronics, Instrumentation. --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electrical engineering --- Physical sciences --- Construction --- Industrial arts --- Technology --- Gate array circuits --- Metal oxide semiconductors. --- Metal oxide semiconductors, Complementary. --- Dielectrics. --- Germanium compounds. --- Materials. --- Gate arrays --- Integrated circuits --- Chemicals --- Electric insulators and insulation --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Unipolar transistors --- Transistors --- Charge coupled devices --- Materials --- Dielectrics --- Germanium compounds --- Metal oxide semiconductors --- Metal oxide semiconductors, Complementary --- 621.3.049.77 --- 621.3.049.77 Microelectronics. Integrated circuits --- Microelectronics. Integrated circuits

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Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.

Electronic noise. --- Metal oxide semiconductor field-effect transistors. --- Metal oxide semiconductors, Complementary. --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Noise, Electronic --- Signal theory (Telecommunication) --- Electric noise --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Electronics. --- Systems engineering. --- Acoustics. --- Engineering. --- Microwaves. --- Electronics and Microelectronics, Instrumentation. --- Circuits and Systems. --- Engineering, general. --- Microwaves, RF and Optical Engineering. --- Construction --- Industrial arts --- Technology --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Electrical engineering --- Physical sciences --- Hertzian waves --- Electric waves --- Electromagnetic waves --- Geomagnetic micropulsations --- Radio waves --- Shortwave radio --- Design and construction --- Microelectronics. --- Electronic circuits. --- Optical engineering. --- Mechanical engineering --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment