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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Ion implantation. --- Metals --- Finishing. --- Metal finishing --- Finishes and finishing --- Metal-work --- Implantation, Ion --- Ion bombardment --- Ion plating --- Particle acceleration. --- Optical materials. --- Surfaces (Physics). --- Chemistry, Physical organic. --- Particle Acceleration and Detection, Beam Physics. --- Condensed Matter Physics. --- Optical and Electronic Materials. --- Characterization and Evaluation of Materials. --- Physical Chemistry. --- Chemistry, Physical organic --- Chemistry, Organic --- Chemistry, Physical and theoretical --- Physics --- Surface chemistry --- Surfaces (Technology) --- Optics --- Materials --- Particles (Nuclear physics) --- Acceleration (Mechanics) --- Nuclear physics --- Acceleration --- Condensed matter. --- Electronic materials. --- Materials science. --- Physical chemistry. --- Chemistry, Theoretical --- Physical chemistry --- Theoretical chemistry --- Chemistry --- Material science --- Physical sciences --- Electronic materials --- Condensed materials --- Condensed media --- Condensed phase --- Materials, Condensed --- Media, Condensed --- Phase, Condensed --- Liquids --- Matter --- Solids