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2002 (5)

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To the digital age
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ISBN: 0801868092 0801886392 9780801873495 0801873495 9780801873492 9780801886393 9780801868092 Year: 2002 Publisher: Baltimore Johns Hopkins University Press

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"The definitive history of how the transistor was transformed from an analog into a truly digital device." -- IEEE Spectrum.

MOSFET Modeling & BSIM3 User’s Guide
Authors: ---
ISBN: 0792385756 9786610206186 1280206187 0306470500 Year: 2002 Publisher: New York, NY : Springer US : Imprint: Springer,

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Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Silicon germanium materials & devices
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ISBN: 1281077119 9786611077112 0080541216 1856173968 9781856173964 9780080541211 9781281077110 6611077111 Year: 2002 Publisher: Oxford Elsevier

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The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium

High-speed heterostructure devices
Authors: ---
ISBN: 1107129184 128041796X 9786610417964 0511179812 1139146459 0511066902 0511060599 0511330863 0511754590 0511069030 9780511066900 9780511754593 9780511069031 9781280417962 9780511060595 0521781523 9780521781527 0521024234 9780521024235 9781107129184 6610417962 9780511179815 9781139146456 9780511330865 Year: 2002 Publisher: Cambridge New York Cambridge University Press

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Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

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