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Principles and techniques of electron microscopy: : biological applications
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ISBN: 0521632870 9780521632874 Year: 2000 Publisher: Cambridge: Cambridge university press,

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Principles and Techniques of Electron Microscopy has established itself as a standard book for biological electron microscopists wishing to learn how to prepare their specimens for electron microscopic investigation. This fully revised and expanded 4th edition includes three new chapters covering such topics as immunocytochemistry and applications of microwave irradiation to microscopy. This revised and expanded 4th edition of Principles and Techniques of Electron Microscopy provides practical instructions on how to process biological specimens, as well as a detailed discussion on the principles underlying the various processes. The book presents methods in a self-explanatory form. Further, alternative procedures and points of disagreement help the reader interpret data accurately. What sets this book apart from its competition is that it not only describes techniques but also explains the principles behind the techniques; that is, chemical reactions underlying the use of various reagents for preserving and staining cellular components.


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Donor/acceptor organizations and the electron-transfer paradigm for organic reactivity
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Year: 2000

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Fundamentals of carrier transport
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ISBN: 9780521631341 9780521637244 9780511618611 0521631343 Year: 2000 Publisher: Cambridge Cambridge University Press

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Analytical microscopy : measurements and characterization.
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Year: 2000 Publisher: [Golden, CO] : [National Renewable Energy Laboratory],

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Fundamentals of carrier transport
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ISBN: 0511825161 0511618611 Year: 2000 Publisher: Cambridge : Cambridge University Press,

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Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices. The author begins by covering a range of essential physical principles. He then goes on to cover both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. The use of Monte Carlo simulation methods is explained in detail. Many homework exercises are provided and there are a variety of worked examples. The book will be of great interest to graduate students of electrical engineering and applied physics. It will also be invaluable to practising engineers working on semiconductor device research and development.


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A conformal-mapping treatment of the effect of a semi-infinite gate on a two-dimensional electron gas
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Year: 2000 Publisher: Adelphi, MD : Army Research Laboratory,

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Interpenetrating polymer network (IPN) adhesives for electron beam cure
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Year: 2000 Publisher: Aberdeen Proving Ground, MD. : Army Research Laboratory,

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Semiconductor transport
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ISBN: 0748408657 0748408665 Year: 2000 Publisher: London : Taylor & Francis,

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Newnes passive and discrete circuits
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ISBN: 0750641924 9781429497817 1429497815 9780750641920 1281021679 9781281021670 9786611021672 6611021671 0080512763 9780080512761 Year: 2000 Publisher: Oxford Boston Newnes

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Newnes Passive and Discrete Circuits Pocket Book is aimed at all engineers, technicians, students and experimenters who can build a design directly from a circuit diagram. In a highly concise form Ray Marston presents a huge compendium of circuits that can be built as they appear, adapted or used as building blocks. The devices used have been carefully chosen for their ease of availability and reasonable price. The selection of devices has been thoroughly updated for the second edition, which has also been expanded to cover the latest ICs.The three sections of the book cover: Moder

Characterization of high Tc materials and devices by electron microscopy
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ISBN: 1107113016 1280417013 9786610417018 0511175078 0511039662 0511155174 0511328664 0511534825 0511053398 9780511039669 9780511534829 9780511038150 0511038151 6610417016 9780511053399 052155490X 9780521554909 9781107113015 9781280417016 9780511175077 9780511155178 9780511328664 9780521031707 0521031702 Year: 2000 Publisher: Cambridge New York Cambridge University Press

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This is a clear account of the application of electron-based microscopies to the study of high-Tc superconductors. Written by leading experts, this compilation provides a comprehensive review of scanning electron microscopy, transmission electron microscopy and scanning transmission electron microscopy, together with details of each technique and its applications. Introductory chapters cover the basics of high-resolution transmission electron microscopy, including a chapter devoted to specimen preparation techniques, and microanalysis by scanning transmission electron microscopy. Ensuing chapters examine identification of superconducting compounds, imaging of superconducting properties by low-temperature scanning electron microscopy, imaging of vortices by electron holography and electronic structure determination by electron energy loss spectroscopy. The use of scanning tunnelling microscopy for exploring surface morphology, growth processes and the mapping of superconducting carrier distributions is discussed. Final chapters consider applications of electron microscopy to the analysis of grain boundaries, thin films and device structures. Detailed references are included.

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