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book (13)


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1997 (13)

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Crystal fire: the birth of the information age
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ISBN: 0393041247 9780393041248 Year: 1997 Publisher: New York (N.Y.): Norton,

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Transistors --- Electronics

Microwave transistor amplifiers : analysis and design.
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ISBN: 0132543354 Year: 1997 Publisher: Upper Saddle River Prentice Hall


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1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

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Proceedings : 1997 GaAs Reliability Workshop : October 12, 1997, Anaheim, California
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Year: 1997 Publisher: [Place of publication not identified] IEEE

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Flat panel display materials III
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ISBN: 1558993754 Year: 1997 Publisher: Pittsburgh Materials research society

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1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

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Introductory electronic devices and circuits : conventional flow version
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ISBN: 0132435020 Year: 1997 Publisher: Upper Saddle River, NJ : Prentice Hall,


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Proceedings : 1997 GaAs Reliability Workshop : October 12, 1997, Anaheim, California
Authors: --- ---
Year: 1997 Publisher: [Place of publication not identified] IEEE

Gate dielectrics and MOS ULSIs : principles, technologies, and applications.
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ISBN: 3540631828 3642645879 3642608566 Year: 1997 Publisher: Berlin Springer

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Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.

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