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Semiconductors --- Optoelectronic devices --- Microwave integrated circuits --- Transistors
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Gallium arsenide semiconductors --- Bipolar transistors --- Accelerated life testing --- Congresses --- Reliability
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Information display systems --- Liquid crystal displays --- Thin film transistors --- Materials --- Congresses --- Materials --- Congresses --- Materials --- Congresses
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Metal oxide semiconductor field-effect transistors --- Computer simulation --- SPICE (Computer file) --- 621.382 --- -MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Electronic devices using solid-state effects. Semiconductor devices --- Computer simulation. --- -Electronic devices using solid-state effects. Semiconductor devices --- 621.382 Electronic devices using solid-state effects. Semiconductor devices --- -621.382 Electronic devices using solid-state effects. Semiconductor devices --- MOSFET --- Simulation program with integrated circuit emphasis --- Metal oxide semiconductor field-effect transistors - Computer simulation
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Gallium arsenide semiconductors --- Bipolar transistors --- Accelerated life testing --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Congresses --- Reliability --- Reliability --- Congresses --- Congresses
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Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
Dielectric devices. --- Integrated circuits --- Metal oxide semiconductors. --- Silicon-on-insulator technology. --- Ultra large scale integration. --- Dielectric devices --- Metal oxide semiconductors --- Silicon-on-insulator technology --- SOI devices --- Unipolar transistors --- ULSI circuits --- Ultra large scale integration of circuits --- Devices, Dielectric --- Ultra large scale integration --- Electric insulators and insulation --- Semiconductors --- Transistors --- Charge coupled devices --- Dielectrics --- Condensed matter. --- Optical materials. --- Electronic materials. --- Condensed Matter Physics. --- Optical and Electronic Materials. --- Electronic materials --- Optics --- Materials --- Condensed materials --- Condensed media --- Condensed phase --- Materials, Condensed --- Media, Condensed --- Phase, Condensed --- Liquids --- Matter --- Solids
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