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Ion implantation is the primary technology which is used in the semiconductor industry to introduce impurities into semiconductors to form devices and VLSI circuits. All VLSI manufacturing includes ion implantation steps. The technology has universal acceptance because of the accuracy of the number of implanted atoms, and the uniformity of the implantation across large semiconductor wafers. This book is a tutorial presentation of the physics, processes, technology and operation of ion implantation. Its purpose is to serve as a teaching manual, a source book of relevant data, and a compilation of comments from some of the world's most experienced practitioners of ion implantation. The primary problems in using ion implantation in VLSI processing are wafer cooling, dielectric charging, particulate contamination and process control. Each of these problems is addressed in a separate chapter. Each section is described from first principles in simple tutorial steps, while keeping the goal of finding answers to the most modern and complex problems in VLSI processing.

Solid state physics --- Ion bombardment. --- 538.91 --- Ion bombardment --- 538.97 --- Beams, Ion --- Bombardment, Ion --- Impact, Ion --- Ion beams --- Ion impact --- Ionic bombardment --- Collisions (Nuclear physics) --- Ions --- Structures, including transitions --- Special geometry and interaction with particles and radiation --- 538.97 Special geometry and interaction with particles and radiation --- 538.91 Structures, including transitions

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Ion bombardment --- Plasma etching --- Semiconductors --- Thin films --- Couches minces --- Congresses --- Etching --- Congrès --- -Plasma etching --- -Semiconductors --- -Thin films --- -538.91 <063> --- 538.97 <063> --- Films, Thin --- Solid film --- Solid state electronics --- Solids --- Surfaces (Technology) --- Coatings --- Thick films --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Dry etching --- Beams, Ion --- Bombardment, Ion --- Impact, Ion --- Ion beams --- Ion impact --- Ionic bombardment --- Collisions (Nuclear physics) --- Ions --- -Congresses --- Structures, including transitions--Congressen --- Special geometry and interaction with particles and radiation--Congressen --- Materials --- 538.97 <063> Special geometry and interaction with particles and radiation--Congressen --- 538.91 <063> Structures, including transitions--Congressen --- Congrès --- 538.91 <063> --- Etching&delete& --- Ion bombardment - Congresses --- Semiconductors - Etching - Congresses --- Thin films - Congresses --- Plasma etching - Congresses

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621.9.048 --- CAD/CAM systems --- Rapid prototyping --- Ion beam lithography --- Ion bombardment --- Lithography --- Desktop automated manufacturing --- Freeform fabrication --- Freeform manufacturing --- Prototyping, Rapid --- RP (Rapid prototyping) --- Prototypes, Engineering --- Computer Aided Design/Computer Aided Manufacturing Systems --- Computer Aided Manufacturing Systems --- Computer-aided engineering --- Computer integrated manufacturing systems --- Production engineering --- Production management --- Automation --- Erosion machining, blasting. Spark erosion. Ultrasonic, vibration machining. Machining with particle beams. Electron-beam machining etc. --- Industrial applications --- Data processing --- CAD/CAM systems. --- Ion beam lithography. --- Rapid prototyping. --- 621.9.048 Erosion machining, blasting. Spark erosion. Ultrasonic, vibration machining. Machining with particle beams. Electron-beam machining etc. --- Laser sintering --- Erosion machining, blasting. Spark erosion. Ultrasonic, vibration machining. Machining with particle beams. Electron-beam machining etc --- Additive manufacturing