Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Frequency standards. --- Ions. --- Lasers.

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Laser materials --- Transition metal ions

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Secondary ion mass spectroscopy --- Secondary ion mass spectrometry --- Spectrométrie de masse des ions secondaires.

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

54-128 --- 541.573 --- 541.132 --- Ionization of gases --- Molecules --- Photoionization --- #WSCH:AAS2 --- Chemistry. Mineralogical sciences--?-128 --- Ionogenic bonds. Electrovalency --- Electrolytic dissociation. Ions --- Ionization --- Photochemistry --- Gas ionisation --- Gas ionization --- Gases --- Gases, Ionization of --- Jesse effect --- 541.132 Electrolytic dissociation. Ions --- 541.573 Ionogenic bonds. Electrovalency --- 54-128 Chemistry. Mineralogical sciences--?-128 --- Ions --- Intermediates (Chemistry) --- Matter --- Physics --- Solution (Chemistry) --- Electrolysis --- Electrons --- Properties --- Ions. --- Molecules. --- Photoionization. --- Ionization of gases. --- Ionisation des gaz. --- Photoionisation. --- Molécules.

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Ion implantation is the primary technology which is used in the semiconductor industry to introduce impurities into semiconductors to form devices and VLSI circuits. All VLSI manufacturing includes ion implantation steps. The technology has universal acceptance because of the accuracy of the number of implanted atoms, and the uniformity of the implantation across large semiconductor wafers. This book is a tutorial presentation of the physics, processes, technology and operation of ion implantation. Its purpose is to serve as a teaching manual, a source book of relevant data, and a compilation of comments from some of the world's most experienced practitioners of ion implantation. The primary problems in using ion implantation in VLSI processing are wafer cooling, dielectric charging, particulate contamination and process control. Each of these problems is addressed in a separate chapter. Each section is described from first principles in simple tutorial steps, while keeping the goal of finding answers to the most modern and complex problems in VLSI processing.

Solid state physics --- Ion bombardment. --- 538.91 --- Ion bombardment --- 538.97 --- Beams, Ion --- Bombardment, Ion --- Impact, Ion --- Ion beams --- Ion impact --- Ionic bombardment --- Collisions (Nuclear physics) --- Ions --- Structures, including transitions --- Special geometry and interaction with particles and radiation --- 538.97 Special geometry and interaction with particles and radiation --- 538.91 Structures, including transitions