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Semiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology. This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.
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Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevices is an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary a
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This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials a
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In the field of organic semiconductors researchers and manufacturers are faced with a wide range of potential molecules. This work presents concepts for simulation-based predictions of material characteristics starting from chemical stuctures. The focus lies on charge transport - be it in microscopic models of amorphous morphologies, lattice models or large-scale device models.An extensive introductory review, which also includes experimental techniques, makes this work interesting for a broad readership. Contents: Organic Semiconductor DevicesExperimental TechniquesCharge Dynamics at Dierent ScalesComputational MethodsEnergetics and Dispersive TransportCorrelated Energetic LandscapesMicroscopic, Stochastic and Device SimulationsParametrization of Lattice ModelsDrift-Diusion with Microscopic Link
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