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This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms.

resistive switching memory --- in-memory computing --- crosspoint array --- artificial intelligence --- deep learning --- dielectric --- RTN --- TAT --- Wiener–Khinchin --- transient analysis --- phonon --- surface roughness --- spectral index --- power spectrum --- program suspend --- 3D NAND Flash --- Solid State Drives --- MOSFET --- low-frequency noise --- random telegraph noise --- evaluation method --- array test pattern --- STT-MRAM --- spintronics --- CoFeB --- composite free layer --- low power electronics --- NAND Flash memory --- endurance --- reliability --- oxide trapped charge --- artificial neural networks --- neuromorphic computing --- NOR Flash memory arrays --- program noise --- pulse-width modulation --- 3D NAND --- floating gate cell --- charge-trap cell --- CMOS under array --- bumpless --- TSV --- WOW --- COW --- BBCube --- bandwidth --- yield --- power consumption --- thermal management --- n/a --- Wiener-Khinchin