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The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Bipolar transistors. --- Silicon alloys. --- Two-junction transistors --- Transistors --- Energy --- Digital communications. --- Communications, Digital --- Digital transmission --- Pulse communication --- Digital electronics --- Pulse techniques (Electronics) --- Telecommunication --- Digital media --- Signal processing --- Digital techniques

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book fo

Integrated circuits --- Metal oxide semiconductor field-effect transistors --- Strains and stresses. --- Fault tolerance. --- Reliability. --- Architectural engineering --- Engineering, Architectural --- Stresses and strains --- Architecture --- Elastic solids --- Flexure --- Mechanics --- Statics --- Structural analysis (Engineering) --- Deformations (Mechanics) --- Elasticity --- Engineering design --- Graphic statics --- Strength of materials --- Stress waves --- Structural design --- MOSFET --- Field-effect transistors --- Metal oxide semiconductors --- Fault tolerance (Engineering) --- Reliability

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The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems.

spin memristor --- mask operation --- memristor switch --- memristor crossbar --- image processing --- CMOS --- voltage-controlled oscillator --- switched-biasing --- flicker noise --- phase noise --- current source --- figure-of-merit --- pixel-level ADC --- current-input ADC --- readout circuit --- microbolometer --- high SNR --- wide dynamic range --- current-reuse --- injection-locked frequency divider --- radar sensor --- wideband --- RF receiver --- blocker --- second-order intermodulation (IM2) --- orthogonal frequency division modulation (OFDM) --- MedRadio --- medical implanted communication service (MICS) --- biomedical device --- biosensors --- LC-VCO --- current-shaping --- 90 nm --- current tail --- varactor --- LC tank --- on-wafer --- vibration energy harvester --- power management circuit --- CMOS rectifier --- dynamic threshold cancellation technique --- high power conversion efficiency --- CMOS circuit --- analog system --- signal processing --- learning algorithm --- artificial neural network --- freeware --- open science --- analog microelectronics design --- long channel transistors --- short channel transistors --- integrated circuit design --- CMOS design --- VLSI --- higher education --- educational innovation --- integrated circuit layout --- complex thinking --- CMOS detector --- concurrent-mode --- differential detector IC --- imaging SNR --- integrated folded-dipole antenna --- sub-terahertz imaging --- voltage responsivity

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This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.

physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al–Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga–Sn–Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel–manganese–cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis --- n/a --- Al-Ni system --- Ga-Sn-Zn alloys --- nickel-manganese-cobalt oxide (NMC)

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Organic Electronics is a rapidly evolving multidisciplinary research field at the interface between Organic Chemistry and Physics. Organic Electronics is based on the use of the unique optical and electrical properties of π-conjugated materials that range from small molecules to polymers. The wide activity of researchers in Organic Electronics is testament to the fact that its potential is huge and its list of potential applications almost endless. Application of these electronic and optoelectronic devices range from Organic Field Effect Transistors (OFETs) to Organic Light Emitting Diodes (OLEDs) and Organic Solar Cells (OSCs), sensors, etc. We invited a series of colleagues to contribute to this Special Issue with respect to the aforementioned concepts and keywords. The goal for this Special Issue was to describe the recent developments of this rapidly advancing interdisciplinary research field. We thank all authors for their contributions.

fluorene --- nitrofluorene --- Knoevenagel reaction --- near infrared absorption --- push–pull chromophore --- poly(nitro)fluorene --- organic tandem solar cell --- 3D nano-ripple pattern --- ZnO sol-gel --- charge recombination layer --- low temperature solution process --- on-surface reaction --- stepwise growth --- sequential growth --- hierarchical growth --- macromolecular organic structures --- surface covalent organic framework --- nanoribbons --- macrocycles --- coordination polymers --- silicon phthalocyanines --- n-type organic semiconductors --- organic thin-film transistors --- push-pull dyes --- chromophore --- naphthalene --- solvatochromism --- DFT --- fullerene derivative --- P3HT --- polymer solar cell --- QSPR --- TD-DFT