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This book discusses the design and performance analysis of SDRAM controllers that cater to both real-time and best-effort applications, i.e. mixed-time-criticality memory controllers. The authors describe the state of the art, and then focus on an architecture template for reconfigurable memory controllers that addresses effectively the quickly evolving set of SDRAM standards, in terms of worst-case timing and power analysis, as well as implementation. A prototype implementation of the controller in SystemC and synthesizable VHDL for an FPGA development board are used as a proof of concept of the architecture template.
Electrical Engineering --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Embedded computer systems --- Dynamic random access memory. --- Programmable controllers. --- Programming. --- Controllers, Programmable --- DRAM (Dynamic random access memory) --- Electronic controllers --- Automatic control --- Random access memory --- Semiconductor storage devices --- Systems engineering. --- Computer science. --- Electronics. --- Circuits and Systems. --- Processor Architectures. --- Electronics and Microelectronics, Instrumentation. --- Electrical engineering --- Physical sciences --- Informatics --- Science --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Electronic circuits. --- Microprocessors. --- Microelectronics. --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Minicomputers --- Electron-tube circuits --- Electric circuits --- Electron tubes
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This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for a range of low-power VLSI SoCs, ranging from ultra-low power to power-aware high-performance applications. After a detailed review of prior-art GC-eDRAMs, an analytical retention time distribution model is introduced and validated by silicon measurements, which is key for low-power GC-eDRAM design. The book then investigates supply voltage scaling and near-threshold voltage (NTV) operation of a conventional gain cell (GC), before presenting novel GC circuit and assist techniques for NTV operation, including a 3-transistor full transmission-gate write port, reverse body biasing (RBB), and a replica technique for optimum refresh timing. Next, conventional GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy.
Embedded computer systems. --- Systems on a chip. --- SOC design --- Systems on chip --- Embedded systems (Computer systems) --- Engineering. --- Computer memory systems. --- Electronics. --- Microelectronics. --- Electronic circuits. --- Circuits and Systems. --- Memory Structures. --- Electronics and Microelectronics, Instrumentation. --- Embedded computer systems --- Computer systems --- Architecture Analysis and Design Language --- Systems engineering. --- Memory management (Computer scie. --- Electrical engineering --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Computer memory systems --- Computers --- Electronic digital computers --- Storage devices, Computer --- Computer input-output equipment --- Memory management (Computer science) --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Memory systems --- Storage devices --- Dynamic random access memory --- Systems on a chip --- DRAM (Dynamic random access memory) --- Random access memory --- Semiconductor storage devices
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The present book contains the 24 total articles accepted and published in the Special Issue “Fuzzy Sets, Fuzzy Logic and Their Applications, 2020” of the MDPI Mathematics journal, which covers a wide range of topics connected to the theory and applications of fuzzy sets and systems of fuzzy logic and their extensions/generalizations. These topics include, among others, elements from fuzzy graphs; fuzzy numbers; fuzzy equations; fuzzy linear spaces; intuitionistic fuzzy sets; soft sets; type-2 fuzzy sets, bipolar fuzzy sets, plithogenic sets, fuzzy decision making, fuzzy governance, fuzzy models in mathematics of finance, a philosophical treatise on the connection of the scientific reasoning with fuzzy logic, etc. It is hoped that the book will be interesting and useful for those working in the area of fuzzy sets, fuzzy systems and fuzzy logic, as well as for those with the proper mathematical background and willing to become familiar with recent advances in fuzzy mathematics, which has become prevalent in almost all sectors of the human life and activity.
bipolar gradation of openness --- bipolar gradation of closedness --- bipolar fuzzy topology --- bipolar gradation preserving map --- fuzzy collaborative forecasting --- dynamic random access memory --- partial consensus --- fuzzy intersection --- fuzzy linear system --- fuzzy number --- fuzzy number vector --- embedding method --- inductive and deductive reasoning --- fuzzy logic (FL) --- scientific method --- probability and statistics --- Bayesian probabilities --- fuzzy implication --- ordering property --- least fuzzy negation --- t-conditionality --- neutrosophic set --- plithogenic set --- fuzzy set --- entropy --- similarity measure --- information measure --- Hyers-Ulam stability --- pexider type functional equation --- intuitionistic fuzzy normed spaces --- alternative fixed point theorem --- interval-valued fuzzy competition graph --- interval-valued fuzzy p competition graph --- interval-valued fuzzy neighbourhood graph --- interval-valued m-step fuzzy competition graph --- homomorphism of graph products --- max-min algebra --- fuzzy max-T algebra --- Łukasiewicz triangular norm --- max-Łukasiewicz algebra --- parametric solvability --- soft set --- fuzzy soft set --- multi-fuzzy set --- multi-fuzzy soft set --- ℒℳℱ?? --- similarity measure of ℒℳℱ?? --- site selection --- shopping mall site selection --- linguistic terms for fuzzy variable --- fuzzy AHP --- fuzzy TOPSIS --- octahedron set --- i-octahedron subgroupoid --- i-octahedron ideal --- i-sup-property, i-octahedron subgroup --- i-octahedron subring --- interval matrix --- interval eigenvector --- strong interval eigenvector --- fuzzy nonlinear systems --- fuzzy arithmetic --- fuzzy calculus --- multidimensional fuzzy arithmetic --- RDM fuzzy arithmetic --- fuzzy parametric form --- fuzzy measures --- monotone measures --- product spaces --- Schauder fixed point theorem --- fuzzy normed linear space --- t-norm --- measure of non-compactness --- fuzzy logic connectives --- law of importation --- α-migrativity --- distance measure --- fuzzy differential equations --- fuzzy difference equations --- mixed continuous-discrete model --- strongly generalized Hukuhara differentiability --- time value of money --- GEFS --- SEFS --- fuzzy relations: fuzzy sets --- max–min composition --- min–max composition --- monotone statistical parameters --- fuzzy statistics --- FAHP --- FTOPSIS --- FCOPRAS --- hexagonal fuzzy number --- governance --- fuzzy logic --- management system --- type-2 fuzzy set --- fuzzification --- type-reduction --- defuzzification --- B-spline surface model function
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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.
FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F–N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green’s function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer–Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- n/a --- F-N plot --- non-equilibrium Green's function --- Landauer-Büttiker formalism
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