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Book
Ja en neen met transistors.
Authors: ---
Year: 1972 Publisher: Deventer Kluwer

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Multi
Synchronous precharge logic
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ISBN: 9780123985279 0123985277 1283526697 9781283526692 9780124017078 012401707X 9786613839145 Year: 2012 Publisher: Amsterdam ; Boston : Elsevier/Academic Press,

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Precharge logic is used by a variety of industries in applications where processor speed is the primary goal, such as VLSI (very large systems integration) applications. Also called dynamic logic, this type of design uses a clock to synchronize instructions in circuits. This comprehensive book covers the challenges faced by designers when using this logic style, including logic basics, timing, noise considerations, alternative topologies and more. In addition advanced topics such as skew tolerant design are covered in some detail. Overall this is a comprehensive view of precharge logic, whi


Book
Transistors
Authors: --- ---
ISBN: 981024861X 9789810248611 Year: 1998 Publisher: Singapore River Edge, N.J. World Scientific

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This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices - the transistors. The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.

 Principles of Transistor Circuits : introduction to the design of amplifiers, receivers, and digital circuits
Author:
ISBN: 1281021695 9786611021696 008052320X 9780080523200 0750619996 9780750619998 9780750644273 0750644273 9781281021694 6611021698 Year: 2000 Publisher: Newnes,

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Over the last 40 years, Principles of Transistor Circuits has provided students and practitioners with a text they can rely on to keep them at the forefront of transistor circuit design. Although integrated circuits have widespread application, the role of discrete transistors both as important building blocks which students must understand, and as practical solutions to design problems, remains undiminished.The ninth edition has been thoroughly updated to cover the latest technology and applications, including computer circuit simulation, and many diagrams have been revised to

MMIC design : GaAs FETs and HEMTs.
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ISBN: 0890063141 Year: 1989 Publisher: Norwood Artech House

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Book
Parameter extraction and complex nonlinear transistor models
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ISBN: 1630817457 9781630817459 9781630817442 1630817449 Year: 2020 Publisher: Boston

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Book
Practical guide to organic field-effect transistor circuit design
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ISBN: 1523105461 1910242713 9781523105465 9781910242711 9781910242704 1910242705 Year: 2016 Publisher: Shawbury, England ; Shrewsbury, England ; Shropshire, England : Smithers Rapra,

Matching Properties of Deep Sub-Micron MOS Transistors
Authors: --- ---
ISBN: 1280612061 9786610612062 0387243135 0387243143 1441937188 Year: 2005 Volume: 851 Publisher: New York, NY : Springer US : Imprint: Springer,

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Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

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