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Development of gate and base drive using SiC junction field effect transistors
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Year: 2008 Publisher: Adelphi, Md. : Army Research Laboratory,

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Theory and operation of cold field-effect transistor (FET) external parasitic parameter extraction
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Year: 2009 Publisher: Adelphi, MD : Army Research Laboratory,

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Programmable, automated transistor test system
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Year: 1986 Publisher: Washington, D.C. : National Aeronautics and Space Administration, Scientific and Technical Information Branch,

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Identification and mapping of mechanically exfoliated 1H-MoS2 flakes for field-effect transistors
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Year: 2014 Publisher: Adelphi, MD : Army Research Laboratory,

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User-based software tool for s-parameter conversion and manipulation
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Year: 2011 Publisher: Adelphi, MD : Army Research Laboratory,

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A conformal-mapping treatment of the effect of a semi-infinite gate on a two-dimensional electron gas
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Year: 2000 Publisher: Adelphi, MD : Army Research Laboratory,

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Effects of growth conditions on the measured electrical properties of monolayer molybdenum disulfide / by Alexander L Mazzoni [and three others].
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Year: 2017 Publisher: Adelphi, MD : US Army Research Laboratory,

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Classical gradual-channel modeling of graphene field-effect transistors (FETs)
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Year: 2010 Publisher: Adelphi, MD : Army Research Laboratory,

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The role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms
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Year: 2011 Publisher: Adelphi, MD : Army Research Laboratory,

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Evaluation of an electronic load for pulsed current characterization of power semiconductors
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Year: 2010 Publisher: Adelphi, MD : Army Research Laboratory,

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