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ISBN: 172817192X 1728171938 Year: 2020 Publisher: Piscataway, NJ : IEEE,
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ISBN: 1504473930 Year: 2021 Publisher: [Place of publication not identified] : IEEE,
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A method for computation of an energy efficiency upper bound for an apparatus (wireless or wired) processing a particular communication signal waveform is specified in this standard. This method utilizes the signal envelope probability density function in combination with apparatus' power dissipation characteristics to calculate the energy efficiency upper bound. The purpose of this standard is to provide a consistent tool to other Working Groups and other practitioners who need to evaluate any communication signal waveforms potential for energy efficiency when implemented in hardware.
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Year: 2010 Publisher: Adelphi, MD : Army Research Laboratory,
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ISBN: 1523125578 1839530375 Year: 2019 Publisher: London, England : Institution of Engineering and Technology,
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ISBN: 1523125586 1839530391 Year: 2019 Publisher: London, England : Institution of Engineering and Technology,
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ISBN: 0738143618 Year: 1976 Publisher: [Place of publication not identified] : IEEE,
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This standard provides standard test procedures for amplifiers and preamplifiers for semiconductor detectors for ionizing radiation. It supersedes the previous edition, IEEE Std 301-1969 (ANSI N42.2-1969). The standard has been modified and refined based on the experience gained in using the earlier edition over a six-year period and taking into account advances in the technology. Improvements in preamplifier noise characteristics and pulse shaping techniques as well as increased utilization of integral detector-preamplifier assemblies have occurred in recent years.
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ISBN: 0738106755 Year: 1989 Publisher: New York : IEEE,
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This standard describes test procedures for amplifiers and preamplifiers that are used with semiconductor, scintillation, and proportional detectors in the spectrometry of ionizing radiation. It supersedes ANSI/IEEE Std 301-1976, IEEE Standard Test Procedures for Amplifiers and Preamplifiers for Semiconductor Radiation detectors for Ionizing Radiation. The title was changed because the same amplifiers used for semiconductor detectors are applicable to other types. In this standard, measuring procedures are given in greater detail because with modern amplifiers, perceived performance often depends on the details of measurement. Tests that are specific to amplifiers with time-variant pulse-shaping filters are not included, nor are tests for pile-up rejectors. Time-variant filters allow shorter pulse-shaping times than linear filters for the same signal-to-noise ratio, and pile-up rejectors block pulses that overlap earlier ones, allowing higher count rates for a given spectral-line resolution. Both techniques have the greatest application at very low energies because wide pulses must be used to optimize the SNR, and at high energies where detector artifacts cause low-side tailing of spectrum lines. The pulse width at 50% of peak amplitude is the main amplifier indicator of shaping time because this parameter best allows a performance comparison among different amplifiers. Compared with other parameters, this one is the easiest to measure accurately with an oscilloscope and pulse generator.
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ISBN: 150440145X Year: 1964 Publisher: Piscataway, New Jersey : IEEE,
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Periodical
ISSN: 24734640 Publisher: Piscataway, N.J. : IEEE
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Power amplifiers --- Wireless communication systems --- Power amplifiers. --- Wireless communication systems.
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ISBN: 1509034587 1509034595 Year: 2017 Publisher: Piscataway, New Jersey : IEEE,
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Annotation Power amplifiers are often the most critical component of RF microwave communications systems and consequently the focus of intense research to achieve increased linearity and power efficiency New forms of power amplification are being developed to meet the needs of the wireless communication equipment industry and the world s demand for greater information transmission PAWR2016 will feature tracks on RF microwave Power Amplifiers Papers featuring innovative work are solicited in (but not limited to) the following areas of RF microwave power amplifier technology.
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