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Organic Semiconductor Devices for Light Detection
Authors: ---
ISBN: 9783030944643 9783030944636 9783030944650 9783030944667 Year: 2022 Publisher: Cham Springer International Publishing :Imprint: Springer

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In recent decades, the way human beings interact with technology has been significantly transformed. In our daily life, ever fewer manually controlled devices are used, giving way to automatized houses, cars, and devices. A significant part of this technological revolution relies on signal detection and evaluation, placing detectors as core devices for further technological developments. This book introduces a versatile contribution to achieving light sensing: Organic Semiconductor Devices for Light Detection. The text is organized to guide the reader through the main concepts of light detection, followed by a introduction to the semiconducting properties of organic molecular solids. The sources of non-idealities in organic photodetectors are presented in chapter 5, and a new device concept, which aims to overcome some of the limitation discussed in the previous chapters, is demonstrated. Finally, an overview of the field is given with a selection of open points for future investigation.


Book
Electronic devices : Discrete and integrated
Author:
ISBN: 0133361810 Year: 1990 Publisher: Englewood Cliff, NJ : Prentice-Hall International,

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A New Generation of Ultrafast Oscillators for Mid-Infrared Applications
Authors: ---
ISBN: 9783030897543 9783030897550 9783030897567 9783030897536 Year: 2021 Publisher: Cham Springer International Publishing :Imprint: Springer

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This thesis presents the first successful realization of a compact, low-noise, and few-cycle light source in the mid-infrared wavelength region. By developing the technology of pumping femtosecond chromium-doped II-VI laser oscillators directly with the emission of broad-stripe single-emitter laser diodes, coherent light was generated with exceptionally low amplitude noise - crucial for numerous applications including spectroscopy at high sensitivities. Other key parameters of the oscillator's output, such as pulse duration and output power, matched and even surpassed previous state-of-the-art systems. As a demonstration of its unique capabilities, the oscillator's powerful output was used to drive - without further amplification - the nonlinear generation of coherent mid-infrared light spanning multiple octaves. The resulting table-top system uniquely combines high brilliance and ultrabroad spectral bandwidth in the important mid-infrared spectral range. The rapid development of this technology is comprehensively and lucidly documented in this PhD thesis. Together with a thorough review of literature and applications, and an extensive analysis of the theoretical foundations behind ultrafast laser oscillators, the thesis will serve as a valuable reference for the construction of a new generation of mid-infrared light sources.


Multi
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors : Volume 2, Photodetectors
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ISBN: 9783031205101 9783031205095 9783031205118 9783031205125 Year: 2023 Publisher: Cham Springer International Publishing

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Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given. Considers all types of photodetectors based on II-VI semiconductors; Features detailed analysis of all aspects of II-VI semiconductors applications; Maximizes reader understanding of the present status of II-VI semiconductors and their role in the development of next generation of photodetectors; Stands as an ideal reference for researchers concerned with electronics, optoelectronics, solar cells, electrical engineering, biomedical applications and a robust supplement for university students and faculty. .


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Advanced materials and components for 5G and beyond
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ISBN: 9783031172076 9783031172069 9783031172083 9783031172090 Year: 2022 Publisher: Cham, Switzerland : Springer,

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This book provides a comprehensive introduction to the current status and future trends of materials and component design for fifth-generation (5G) wireless communications and beyond. Necessitated by rapidly increasing numbers of mobile devices and data volumes, and acting as a driving force for innovation in information technology, 5G networks are broadly characterized by ubiquitous connectivity, extremely low latency, and very high-speed data transfer. Such capabilities are facilitated by nanoscale and massive multi-input multi-output (MIMO) with extreme base station and device densities, as well as unprecedented numbers of antennas. This book covers semiconductor solutions for 5G electronics, design and performance enhancement for 5G antennas, high frequency PCB materials and design requirements, materials for high frequency filters, EMI shielding materials and absorbers for 5G systems, thermal management materials and components, and protective packaging and sealing materials for 5G devices. It explores fundamental physics, design, and engineering aspects, as well as the full array of state-of-the-art applications of 5G-and-beyond wireless communications. Future challenges and potential trends of 5G-and-beyond applications and related materials technologies are also addressed. Throughout this book, illustrations clarify core concepts, techniques, and processes. At the end of each chapter, references serve as a gateway to the primary literature in the field. This book is essential reading for today's students, scientists, engineers and professionals who want to understand the current status and future trends in materials advancement and component design in 5G and beyond, and acquire skills for selecting and using materials and 5G component design that takes economic and regulatory aspects into account.


Multi
Spatio-Temporal Modeling and Device Optimization of Passively Mode-Locked Semiconductor Lasers
Authors: ---
ISBN: 9783030962487 9783030962470 9783030962494 9783030962500 Year: 2022 Publisher: Cham Springer International Publishing :Imprint: Springer

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This thesis investigates passively mode-locked semiconductor lasers by numerical methods. The understanding and optimization of such devices is crucial to the advancement of technologies such as optical data communication and dual comb spectroscopy. The focus of the thesis is therefore on the development of efficient numerical models, which are able both to perform larger parameter studies and to provide quantitative predictions. Along with that, visualization and evaluation techniques for the rich spatio-temporal laser dynamics are developed; these facilitate the physical interpretation of the observed features. The investigations in this thesis revolve around two specific semiconductor devices, namely a monolithically integrated three-section tapered quantum-dot laser and a V-shaped external cavity laser. In both cases, the simulations closely tie in with experimental results, which have been obtained in collaboration with the TU Darmstadt and the ETH Zurich. Based on the successful numerical reproduction of the experimental findings, the emission dynamics of both lasers can be understood in terms of the cavity geometry and the active medium dynamics. The latter, in particular, highlights the value of the developed simulation tools, since the fast charge-carrier dynamics are generally not experimentally accessible during mode-locking operation. Lastly, the numerical models are used to perform laser design explorations and thus to derive recommendations for further optimizations.


Multi
Realizing an Andreev Spin Qubit
Authors: ---
ISBN: 9783030838799 9783030838805 9783030838812 9783030838782 Year: 2021 Publisher: Cham Springer International Publishing :Imprint: Springer

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The thesis gives the first experimental demonstration of a new quantum bit ("qubit") that fuses two promising physical implementations for the storage and manipulation of quantum information - the electromagnetic modes of superconducting circuits, and the spins of electrons trapped in semiconductor quantum dots - and has the potential to inherit beneficial aspects of both. This new qubit consists of the spin of an individual superconducting quasiparticle trapped in a Josephson junction made from a semiconductor nanowire. Due to spin-orbit coupling in the nanowire, the supercurrent flowing through the nanowire depends on the quasiparticle spin state. This thesis shows how to harness this spin-dependent supercurrent to achieve both spin detection and coherent spin manipulation. This thesis also represents a significant advancement to our understanding and control of Andreev levels and thus of superconductivity. Andreev levels, microscopic fermionic modes that exist in all Josephson junctions, are the microscopic origin of the famous Josephson effect, and are also the parent states of Majorana modes in the nanowire junctions investigated in this thesis. The results in this thesis are therefore crucial for the development of Majorana-based topological information processing.


Multi
Basic Semiconductor Physics
Author:
ISBN: 9783031255113 9783031255106 9783031255120 9783031255137 Year: 2023 Publisher: Cham Springer International Publishing

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This textbook presents a detailed description of basic semiconductor physics, covering a wide range of important phenomena in semiconductors, from simple to advanced. It introduces and explains four different methods of energy band calculations in the full band region and covers fundamental topics such as the effective mass approximation and electron motion in a periodic potential, the Boltzmann transport equation, and deformation potentials used for the analysis of transport properties. The text also examines experimental and theoretical analyses of cyclotron resonance in detail and reviews essential optical and transport properties, while covering optical transitions, electron–phonon interaction, and electron mobility. It presents numerical calculations of scattering rate, relaxation time, and mobility for typical semiconductors with bulk, quantum well and HEMT structures including wideband gap materials such as GaN and SiC in addition to IV and III-V semiconductors. The updated fourth edition includes coverage of new topics such as surface-modulated superlattices, Wannier–Stark effect, Bloch oscillation, wide band gap semiconductors, and photonic crystals. Featuring full-color diagrams calculated with updated physical parameters, as well as chapter-end problems and solutions, this tried and tested textbook on the basics of semiconductors physics is the cornerstone to any graduate or upper-level undergraduate course on the subject.


Multi
Introduction to Semiconductor Physics and Devices
Authors: ---
ISBN: 9783031084584 9783031084577 9783031084591 9783031084607 Year: 2022 Publisher: Cham Springer International Publishing :Imprint: Springer

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This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.


Multi
Differentiated Layout Styles for MOSFETs : Electrical Behavior in Harsh Environments
Authors: ---
ISBN: 9783031290862 9783031290855 9783031290879 9783031290886 Year: 2023 Publisher: Cham Springer International Publishing

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This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don’t entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.

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