Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Gallium arsenide --- Arsenides --- Gallium compounds --- Gallium arsenide.

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Gallium arsenide

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Gallium arsenide semiconductors --- Semiconductors --- Gallium arsenide semiconductors.

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This licentiate thesis by Rosalía Delgado Carrascón focuses on the development of epitaxial strategies to reduce defects in gallium nitride (GaN) for vertical power devices. It explores two epitaxial approaches using Metal-Organic Chemical Vapor Deposition (MOCVD) to improve GaN materials for high-power electronics. The study highlights the importance of low-defect GaN layers for enhancing power devices like transistors and diodes, crucial for applications in electric vehicles and industrial inverters. The research emphasizes homoepitaxial growth, nucleation schemes, and thermal stability of GaN, offering insights into optimizing growth conditions. The work is intended for researchers and professionals in semiconductor technology, aiming to advance GaN-based power electronics.

Gallium nitride. --- Epitaxy. --- Gallium nitride --- Epitaxy

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

A detailed, wide-ranging, authoritative and up-to-date review of the chemistry of aluminium, gallium, indium and thallium. Coverage is of the chemistry and commercial aspects of the elements themselves; emphasis is on the design and synthesis of materials, their properties and applications.

Aluminum. --- Gallium. --- Indium. --- Thallium.