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In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
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The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2 , 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG
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Silicon carbide --- Electronics --- Materials
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Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Silicon carbide --- Electric properties. --- Solid state chemistry
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Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effec
Silicon carbide --- Silicon-carbide thin films --- Thin films --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Electric properties
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This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial
Silicon carbide --- Silicon-carbide thin films --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Thin films --- Electric properties
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The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-vol
Silicon carbide --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Electric properties
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Silicon carbide --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Electric properties
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