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Germanium. --- Eka-silicon --- Ekasilicon --- Group 14 elements --- Semimetals

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Germanium is a relatively scarce element found in the Earth's crust at a concentration of 0.007% in the form of bromides, chlorides, fluorides, iodides, hydrides, oxides, selenides, sulfides and telurides. It occurs mostly as germanium oxide (GeO2) and germanium tetrachloride (GeCl4). Germanium is widely used as a component in electronic and optical devices and has found several applications in metallurgy, chemotherapy, nanotechnology and catalysis. In this book, the authors present current research in the study of the characteristics, sources and applications of germanium. Topics include meta

Germanium. --- Group 14 elements. --- Carbon group elements --- Group 4a elements --- Group IVa elements --- Chemical elements --- Eka-silicon --- Ekasilicon --- Group 14 elements --- Semimetals

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Sixteen years have passed since human aquaporin-1 (AQP1) was discovered as the first water channel, facilitating trans-membrane water fluxes. Subsequent years of research showed that the water channel AQP1 was only the tip of an iceberg; the iceberg itself being the ubiquitous super family of membrane intrinsic proteins (MIPs) that facilitate trans-membrane transport of water and an increasing number of small, water-soluble and uncharged compounds. Here we introduce you to the superfamily of MIPs and provide a summary about our gradually refined understanding of the phylogenetic relationship of its members. This volume is dedicated to the metalloids, a recently discovered group of substrates for a number of specific MIPs in a diverse spectrum of organisms. Particular focus is given to the essential boron, the beneficial silicon and the highly toxic arsenic. The respective MIP isoforms that facilitate the transport of these metalloids include members from several clades of the phylogenetic tree, suggesting that metalloid transport is an ancient function within this family of channel proteins. Among all the various substrates that have been shown to be transported by MIPs, metalloids take an outstanding position. While water transport seems to be a common function of many MIPs, single isoforms in plants have been identified as being crucially important for the uptake of boric acid as well as silicic acid. Here, the function seems not to be redundant, as mutations in those genes render plants deficient in boron and silicon, respectively.

Aquaporins. --- Semimetals --Physiological transport. --- Aquaporins --- Semimetals --- Metalloids --- Elements --- Porins --- Eukaryota --- Metabolic Phenomena --- Biological Transport --- Inorganic Chemicals --- Ion Channels --- Phenomena and Processes --- Organisms --- Membrane Transport Proteins --- Chemicals and Drugs --- Membrane Glycoproteins --- Membrane Proteins --- Carrier Proteins --- Proteins --- Arsenic --- Boron --- Silicon --- Metabolism --- Plants --- Protein Transport --- Amino Acids, Peptides, and Proteins --- Human Anatomy & Physiology --- Health & Biological Sciences --- Animal Biochemistry --- Physiological transport --- Physiological transport. --- AQP (Proteins) --- Water channel proteins --- Water channels (Cell membranes) --- Medicine. --- Biomedicine. --- Biomedicine general. --- Clinical sciences --- Medical profession --- Human biology --- Life sciences --- Medical sciences --- Pathology --- Physicians --- Metals --- Glycoproteins --- Membrane proteins --- Water-electrolyte balance (Physiology) --- Health Workforce --- Biomedicine, general.

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The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.

Electrical engineering. --- Germanium. --- Semiconductors -- Defects. --- Germanium --- Semiconductors --- Electrical engineering --- Materials Science --- Chemical & Materials Engineering --- Engineering & Applied Sciences --- Defects --- Materials --- Defects. --- Engineering --- Engineering materials --- Industrial materials --- Eka-silicon --- Ekasilicon --- Optical materials. --- Engineering. --- Optical and Electronic Materials. --- Condensed Matter Physics. --- Engineering, general. --- Engineering design --- Manufacturing processes --- Group 14 elements --- Semimetals --- Construction --- Industrial arts --- Technology --- Optics --- Electronic materials. --- Condensed matter. --- Condensed materials --- Condensed media --- Condensed phase --- Materials, Condensed --- Media, Condensed --- Phase, Condensed --- Liquids --- Matter --- Solids --- Electronic materials

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This book presents data on the optical constants of metal elements (Na, Au, Mg, Hg, Sc, Al, Ti, ß-Sn, V, Cr, Mn, Fe, La, Th, etc.) semimetal elements (graphite, Sb, etc.), metallic compounds (TiN, VC, TiSi 2 , CoSi 2 , etc.) and high-temperature superconducting materials (YBa 2 Cu 3 O 7-d , MgB 2 , etc.). A complete set of the optical constants are presented in tabular and graphical forms over the entire photon-energy range. They are: the complex dielectric constant e( E )=e 1 ( E )+ie 2 ( E ), the complex refractive index n *( E )= n ( E )+i k ( E ), the absorption coefficient a( E ) and the

Metal coating. --- Metallizing. --- Polymers --- Metalization --- Metalizing --- Metallization --- Metal coating --- Coating, Metal --- Metallic coating --- Coatings --- Metallic composites --- Metallic films --- Metals --- Protective coatings --- Refractory coating --- Surfaces (Technology) --- Plating --- Surfaces. --- Semimetals --- Transition metal compounds --- 620.18 --- 669.018 --- Chemicals --- Metalloids --- Metallic elements --- Chemical elements --- Ores --- Metallurgy --- Films, Metallic --- Thin films --- 620.18 Investigation of structure of materials. Metallography. Analogous study of non-metals --- Investigation of structure of materials. Metallography. Analogous study of non-metals --- 669.018 Metallic materials from the point of view of their general properties. Alloys in general --- Metallic materials from the point of view of their general properties. Alloys in general --- Optical properties