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The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials
Semiconductor doping. --- Semiconductors --- Effect of radiation on.
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Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Diffusion --- Properties
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This twelfth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective XI (Volume 293) and the end of September 2010 (journal availability permitting). As well as the 562 metals abstracts, the issue includes: ""Bulk Diffusion of Homovalent Atomic Probes of Scandium, Lanthanum and Thorium in Single Crystals of Tungsten"" (Klotsman, Tatarinova & Timofeev), ""Behaviour of Artificial Aging in 6066 Alloy using Microhardness and Nuclear Techniques"" (Badawi, Abdel-Rahman, El-Nahhas & Abdel-Rahman), ""Stru
Metals --- Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Defects. --- Diffusion --- Properties
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in preparation
Diffusion. --- Metals --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Defects. --- Diffusion --- Properties
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This thirteenth volume in the series covers the latest results in the field. As well as some 360 metals-related abstracts, the issue includes original papers on all of the major material groups: ""Bulk Diffusion of Homovalent Non-Magnetic Atomic Probes of Titanium and Zirconium in Tungsten Single Crystals"", ""Comparative Mossbauer Analysis of Superfine Structure of Hadfield Steel Upon Different Kinds of Severe Deformation"", Assessment of Microstructural Degradation in 2.25Cr-1Mo Steel..."", ""Isochronal and Isothermal Annealing of Wrought Aluminum Alloy"", ""Application of the Photoacoustic
Metals --- Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Defects. --- Diffusion --- Properties
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This eleventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective X (Volume 278) and the end of August 2009 (journal availability permitting). As well as the 352 metals abstracts (a lower number than usual due to 'general' papers now being covered by a separate series), the issue includes: ""Electronic States and Doping Effect of Carbon in the Kink of BCC Iron (Qiu, Xia, Chen), ""A Study of the Variation of Monovacancy Formation Energy with the Parameter of Ashcroft's Potential and Different E
Metals --- Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Defects. --- Diffusion --- Properties
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This tenth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective IX (Volume 265) and the end of May 2008 (journal availability permitting). As well as the 452 metals abstracts, the issue includes - in line with the new editorial policy of including original papers on all of the major material groups: ""Defect Investigation of Plastically Deformed Al 5454 Wrought Alloy Using PADBS and Electrical Measurements"" (Abdel-Rahman, Kamel, Lotfy, Badawi and Abdel-Rahman), ""Activation Enthalpy of Disloca
Metals --- Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Defects. --- Diffusion --- Properties
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Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Diffusion --- Properties
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Diffusion. --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Diffusion --- Properties
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Diffusion --- Gases --- Liquids --- Physics --- Separation (Technology) --- Solution (Chemistry) --- Solutions, Solid --- Matter --- Packed towers --- Semiconductor doping --- Mathematics. --- Properties
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