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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance. • Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models. “Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation. I am emeritus since 2006 and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device function and from compact modeling to detailed Monte Carlo simulations.  This is a must read for anyone interested in the reliability of semiconductor devices.” Karl Hess Swanlund Professor Emeritus University of Illinois, USA “Very few books can be found with special focus on microelectronics reliability. Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations. It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices.  Engineering professionals, researchers, and students can use this book to save time and learn from the experts, with a quick overview of an important class of semiconductor devices and focus on device reliability physics.” Steve Chung Chair Professor National Chiao Tung University, Taiwan.

Engineering. --- Circuits and Systems. --- Electronic Circuits and Devices. --- Electronics and Microelectronics, Instrumentation. --- Electronics. --- Systems engineering. --- Ingénierie --- Electronique --- Ingénierie des systèmes --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Hot carriers. --- Semiconductors. --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Carriers, Hot --- Hot carrier conduction --- Hot electrons --- Electronic circuits. --- Microelectronics. --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Electrons --- Holes (Electron deficiencies) --- Semiconductors --- Materials --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes

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This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

Semiconductors --- Noise. --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Materials --- Electronic circuits. --- Electronics. --- Microelectronics. --- Circuits and Systems. --- Electronic Circuits and Devices. --- Electronics and Microelectronics, Instrumentation. --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Miniature electronic equipment --- Physical sciences --- Electron-tube circuits --- Electric circuits --- Electron tubes

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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

MOSFET --- n/a --- total ionizing dose (TID) --- low power consumption --- process simulation --- two-dimensional material --- negative-capacitance --- power consumption --- technology computer aided design (TCAD) --- thin-film transistors (TFTs) --- band-to-band tunneling (BTBT) --- nanowires --- inversion channel --- metal oxide semiconductor field effect transistor (MOSFET) --- spike-timing-dependent plasticity (STDP) --- field effect transistor --- segregation --- systematic variations --- Sentaurus TCAD --- indium selenide --- nanosheets --- technology computer-aided design (TCAD) --- high-? dielectric --- subthreshold bias range --- statistical variations --- fin field effect transistor (FinFET) --- compact models --- non-equilibrium Green’s function --- etching simulation --- highly miniaturized transistor structure --- compact model --- silicon nanowire --- surface potential --- Silicon-Germanium source/drain (SiGe S/D) --- nanowire --- plasma-aided molecular beam epitaxy (MBE) --- phonon scattering --- mobility --- silicon-on-insulator --- drain engineered --- device simulation --- variability --- semi-floating gate --- synaptic transistor --- neuromorphic system --- theoretical model --- CMOS --- ferroelectrics --- tunnel field-effect transistor (TFET) --- SiGe --- metal gate granularity --- buried channel --- ON-state --- bulk NMOS devices --- ambipolar --- piezoelectrics --- tunnel field effect transistor (TFET) --- FinFETs --- polarization --- field-effect transistor --- line edge roughness --- random discrete dopants --- radiation hardened by design (RHBD) --- low energy --- flux calculation --- doping incorporation --- low voltage --- topography simulation --- MOS devices --- low-frequency noise --- high-k --- layout --- level set --- process variations --- subthreshold --- metal gate stack --- electrostatic discharge (ESD) --- non-equilibrium Green's function

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Dear Readers, Since the ground-breaking, Nobel-prize crowned work of Heeger, MacDiarmid, and Shirakawa on molecularly doped polymers and polymers with an alternating bonding structure at the end of the 1970s, the academic and industrial research on hydrocarbon-based semiconducting materials and devices has made encouraging progress. The strengths of semiconducting polymers are currently mainly unfolding in cheap and easily assembled thin ?lm transistors, light emitting diodes, and organic solar cells. The use of so-called “plastic chips” ranges from lightweight, portable devices over large-area applications to gadgets demanding a degree of mechanical ?exibility, which would overstress conventionaldevices based on inorganic,perfect crystals. The ?eld of organic electronics has evolved quite dynamically during the last few years; thus consumer electronics based on molecular semiconductors has gained suf?cient market attractiveness to be launched by the major manufacturers in the recent past. Nonetheless, the numerous challenges related to organic device physics and the physics of ordered and disordered molecular solids are still the subjects of a cont- uing lively debate. The future of organic microelectronics will unavoidably lead to new devi- physical insights and hence to novel compounds and device architectures of - hanced complexity. Thus, the early evolution of predictive models and precise, computationally effective simulation tools for computer-aided analysis and design of promising device prototypes will be of crucial importance.

Organic electronics --- Electrical Engineering --- Organic Chemistry --- Electrical & Computer Engineering --- Chemistry --- Physical Sciences & Mathematics --- Engineering & Applied Sciences --- Organic electronics. --- Organic solid state chemistry. --- Chemistry, Organic solid state --- Chemistry, Solid state organic --- Solid state organic chemistry --- Chemistry. --- Organic chemistry. --- Physical chemistry. --- Polymers. --- Solid state physics. --- Spectroscopy. --- Microscopy. --- Optical materials. --- Electronic materials. --- Polymer Sciences. --- Optical and Electronic Materials. --- Solid State Physics. --- Spectroscopy and Microscopy. --- Organic Chemistry. --- Physical Chemistry. --- Chemistry, Organic --- Solid state chemistry --- Organic solid state chemistry --- Solid state electronics --- Chemistry, Organic. --- Chemistry, Physical organic. --- Chemistry, Physical organic --- Chemistry, Physical and theoretical --- Organic chemistry --- Optics --- Materials --- Polymere --- Polymeride --- Polymers and polymerization --- Macromolecules --- Polymers  . --- Chemistry, Theoretical --- Physical chemistry --- Theoretical chemistry --- Analysis, Microscopic --- Light microscopy --- Micrographic analysis --- Microscope and microscopy --- Microscopic analysis --- Optical microscopy --- Analysis, Spectrum --- Spectra --- Spectrochemical analysis --- Spectrochemistry --- Spectrometry --- Spectroscopy --- Chemistry, Analytic --- Interferometry --- Radiation --- Wave-motion, Theory of --- Absorption spectra --- Light --- Spectroscope --- Electronic materials --- Physics --- Solids --- Qualitative --- Analytical chemistry