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Semiconductor doping

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Cable accessories, specifically separable insulated connectors and cable joints, used with extruded dielectric cable rated above 5 kV, are required to have an outer semiconducting shield covering their insulation surfaces. The shield is intended to protect the insulation, to provide voltage stress relief, to maintain the accessory surface at or near ground potential under normal operating conditions, and to initiate fault current arcing if accessory insulation should fail. This standard sets forth tests and requirements to demonstrate that the shield will perform these duties. One of the requirements in this standard specifies a maximum shield resistance. This requirement is to assure that the accessory shield provides stress relief and that the shield surface is maintained at or near ground potential. Another requirement in this standard specifies a shield fault current initiation test. This test is designed to demonstrate the ability of the accessory shield to initiate fault current arcs to ground which will cause overcurrent protective devices to operate should the accessory insulation fail.

Cables. --- Electric connectors. --- Semiconductor doping.

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Semiconductors --- Ion implantation --- Semiconductor doping

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ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

Semiconductor doping. --- Doped semiconductors. --- Crystals --- Defects.

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Ion implantation --- Semiconductor doping --- Semiconductors --- Congresses