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This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves which alter the electron energy spectra)  have also been discussed in this context. The influence  quantizing magnetic field, on the EP of the different  HD quantized structures (quantum wells,  quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Physics. --- Quantum Physics. --- Optics, Optoelectronics, Plasmonics and Optical Devices. --- Optical and Electronic Materials. --- Nanoscale Science and Technology. --- Nanotechnology. --- Quantum theory. --- Optical materials. --- Physique --- Théorie quantique --- Matériaux optiques --- Nanotechnologie --- Physics --- Physical Sciences & Mathematics --- Atomic Physics --- Quantum physics. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Electronic materials. --- Optics, Lasers, Photonics, Optical Devices. --- Molecular technology --- Nanoscale technology --- High technology --- Electronic materials --- Optics --- Materials --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Quantum dynamics --- Quantum mechanics --- Quantum physics --- Mechanics --- Thermodynamics --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Lasers. --- Photonics. --- New optics --- Light amplification by stimulated emission of radiation --- Masers, Optical --- Optical masers --- Light amplifiers --- Light sources --- Optoelectronic devices --- Nonlinear optics --- Optical parametric oscillators --- Electronics --- Materials.

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This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Physics. --- Optical materials. --- Nanotechnology. --- Semiconductors. --- Optical and Electronic Materials. --- Solid State Physics. --- Nanoscale Science and Technology. --- Physics --- Physical Sciences & Mathematics --- Electricity & Magnetism --- Molecular technology --- Nanoscale technology --- Optics --- Natural philosophy --- Philosophy, Natural --- Materials --- Solid state physics. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Electronic materials. --- Semiconductors --- Nanostructured materials. --- Thomas-Fermi theory. --- Testing --- Optical methods. --- Fermi-Thomas model --- Fermi-Thomas theory --- Thomas-Fermi atom model --- Thomas-Fermi-Dirac method --- Thomas-Fermi-Dirac model --- Thomas-Fermi method --- Thomas-Fermi model --- Atomic structure --- Nuclear models --- Nanomaterials --- Nanometer materials --- Nanophase materials --- Nanostructure controlled materials --- Nanostructure materials --- Ultra-fine microstructure materials --- Microstructure --- Nanotechnology --- High technology --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Solids --- Electronic materials --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics

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This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Atomic mass. --- Effective mass (Physics). --- Low-dimensional semiconductors. --- Effective mass (Physics) --- Low-dimensional semiconductors --- Atomic mass --- Physics --- Physical Sciences & Mathematics --- Atomic Physics --- Compound semiconductors. --- Optoelectronics. --- Low-dimensional structures (Semiconductors) --- Low-dimensional systems (Semiconductors) --- Optical materials. --- Materials. --- Microwaves. --- Solid State Physics. --- Optical and Electronic Materials. --- Nanoscale Science and Technology. --- Structural Materials. --- Microwaves, RF and Optical Engineering. --- Quantum Optics. --- Semiconductors --- Electronics --- Photonics --- Hertzian waves --- Electric waves --- Electromagnetic waves --- Geomagnetic micropulsations --- Radio waves --- Shortwave radio --- Engineering --- Engineering materials --- Industrial materials --- Engineering design --- Manufacturing processes --- Optics --- Materials --- Solid state physics. --- Electronic materials. --- Nanoscale science. --- Nanoscience. --- Nanostructures. --- Structural materials. --- Optical engineering. --- Quantum optics. --- Photons --- Quantum theory --- Mechanical engineering --- Architectural materials --- Architecture --- Building --- Building supplies --- Buildings --- Construction materials --- Structural materials --- Nanoscience --- Nano science --- Nanoscale science --- Nanosciences --- Science --- Electronic materials --- Solids

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Photoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb1-xGexTe, graphite, Te, II-V, ZnP2, CdP2 , Bi2Te3, Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D.’s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics.

Nanostructured materials. --- Photoemission. --- Photoemission --- Nanostructured materials --- Chemical & Materials Engineering --- Physics --- Engineering & Applied Sciences --- Materials Science --- Electricity & Magnetism --- Technology - General --- Physical Sciences & Mathematics --- Nanomaterials --- Nanometer materials --- Nanophase materials --- Nanostructure controlled materials --- Nanostructure materials --- Ultra-fine microstructure materials --- Emission, Photoelectric --- External photoelectric effect --- Photoelectric effect, External --- Photoelectric emission --- Materials science. --- Quantum optics. --- Semiconductors. --- Optical materials. --- Electronic materials. --- Nanotechnology. --- Materials --- Thin films. --- Materials Science. --- Optical and Electronic Materials. --- Quantum Optics. --- Surfaces and Interfaces, Thin Films. --- Materials Science, general. --- Surfaces. --- Microstructure --- Nanotechnology --- Electrons --- Photoelectricity --- Emission --- Surfaces (Physics). --- Materials. --- Engineering --- Engineering materials --- Industrial materials --- Engineering design --- Manufacturing processes --- Surface chemistry --- Surfaces (Technology) --- Molecular technology --- Nanoscale technology --- High technology --- Optics --- Materials—Surfaces. --- Material science --- Physical sciences --- Films, Thin --- Solid film --- Solid state electronics --- Solids --- Coatings --- Thick films --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Photons --- Quantum theory --- Electronic materials

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Compound semiconductors. --- Compound semiconductors --- Design and construction. --- Semiconductors