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Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given. Considers all types of photodetectors based on II-VI semiconductors; Features detailed analysis of all aspects of II-VI semiconductors applications; Maximizes reader understanding of the present status of II-VI semiconductors and their role in the development of next generation of photodetectors; Stands as an ideal reference for researchers concerned with electronics, optoelectronics, solar cells, electrical engineering, biomedical applications and a robust supplement for university students and faculty. .

Optics. Quantum optics --- Electronics --- Applied physical engineering --- halfgeleiders --- straling --- Optical detectors. --- Semiconductors.

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This textbook presents a detailed description of basic semiconductor physics, covering a wide range of important phenomena in semiconductors, from simple to advanced. It introduces and explains four different methods of energy band calculations in the full band region and covers fundamental topics such as the effective mass approximation and electron motion in a periodic potential, the Boltzmann transport equation, and deformation potentials used for the analysis of transport properties. The text also examines experimental and theoretical analyses of cyclotron resonance in detail and reviews essential optical and transport properties, while covering optical transitions, electron–phonon interaction, and electron mobility. It presents numerical calculations of scattering rate, relaxation time, and mobility for typical semiconductors with bulk, quantum well and HEMT structures including wideband gap materials such as GaN and SiC in addition to IV and III-V semiconductors. The updated fourth edition includes coverage of new topics such as surface-modulated superlattices, Wannier–Stark effect, Bloch oscillation, wide band gap semiconductors, and photonic crystals. Featuring full-color diagrams calculated with updated physical parameters, as well as chapter-end problems and solutions, this tried and tested textbook on the basics of semiconductors physics is the cornerstone to any graduate or upper-level undergraduate course on the subject.

Quantum mechanics. Quantumfield theory --- Optics. Quantum optics --- Solid state physics --- Electronics --- vaste stof --- quantumfysica --- materie (fysica) --- halfgeleiders --- microwaves --- Semiconductors.

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This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

Electrical engineering --- Computer. Automation --- algoritmen --- elektrische circuits --- Modulation-doped field-effect transistors. --- Radio frequency integrated circuits. --- Semiconductors.

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Solid state electronics --- Semiconductors --- Solids --- Semiconductors. --- Solid state electronics. --- Solids. --- Electronics --- Solid state physics --- Transparent solids --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Materials --- #ANTILTP9507 --- Engineering sciences. Technology --- Chemistry. --- General and Others --- General and Others. --- Solid State Physics --- Physics. --- Engineering. --- Telecommunications Technology. --- Journal --- Periodicals --- Chemistry --- Engineering --- Physics --- Telecommunications Technology --- Electrical Engineering --- Semiconducteurs --- Electronique de l'état solide --- Solides --- Périodiques --- EBSCOASP-E EBSCOBSP-E EJINGEN EJPHYSI EPUB-ALPHA-S EPUB-PER-FT

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Materials sciences --- Semiconductors --- Solid state electronics --- Materials science --- Semiconducteurs --- Electronique de l'état solide --- Science des matériaux --- Periodicals --- Périodiques --- Chemistry --- Engineering --- Crystallography --- Civil Engineering