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"This is presented in a concise yet comprehensive manner to those wanting to know more about the technique in general as opposed to advanced sample specific procedures/applications".
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Spectrometric and optical chemical analysis --- fysicochemie --- Secondary ion mass spectrometry --- Spectrométrie de masse des ions secondaires --- SIMS (Spectrum analysis) --- Mass spectrometry --- Spectrométrie de masse des ions secondaires. --- Spectrométrie de masse des ions secondaires.
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Ions --- Stopping power (Nuclear physics) --- Handbooks, manuals, etc --- Handbooks, manuals, etc.
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Ions --- Particle range (Nuclear physics) --- Handbooks, manuals, etc --- Handbooks, manuals, etc
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- Up-to-date compilation of the experimental data on the structures of binary compounds by Villars and colleagues. - Coloured structure maps which order the compounds into their respective structural domains and present for the first time the local co-ordination polyhedra for the 150 most frequently occurring structure types, pedagogically very helpful and useful in the search for new materials with a required crystal structure. - Crystal co-ordination formulas: a flexible notation for the interpretation of solid-state structures by chemist Bill Jensen. - Recent important advances in unders
Domain structure --- Ionic structure --- Molecular structure --- Structure, Molecular --- Chemical structure --- Structural bioinformatics --- Ions --- Structure, Ionic --- Structure of ions --- Domain configuration --- Ferromagnetic domain --- Magnetic domain --- Crystals --- Ferroelectricity --- Ferromagnetism --- Magnetic bubbles --- Structure --- Molecular structure. --- Domain structure. --- Ionic structure.
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Ion bombardment --- Beams, Ion --- Bombardment, Ion --- Impact, Ion --- Ion beams --- Ion impact --- Ionic bombardment --- Collisions (Nuclear physics) --- Ions
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Stopping power (Nuclear physics) --- Helium ions --- Effective range (Nuclear physics) --- Atomic stopping power --- Average ionization potential --- Kinetic energy of particles (Nuclear physics) --- Stopping cross section --- Collisions (Nuclear physics) --- Ionization --- Matter --- Nuclear reactions --- Particles (Nuclear physics) --- Radioactivity --- Linear energy transfer --- Particle range (Nuclear physics) --- Ions --- Heliosphere (Ionosphere) --- Range, Effective (Nuclear physics) --- Potential scattering --- Properties --- Measurement --- Helium ions. --- Effective range (Nuclear physics). --- Stopping power (Nuclear physics).
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Electron beams --- Ion bombardment --- Ions --- Intermediates (Chemistry) --- Matter --- Physics --- Solution (Chemistry) --- Electrolysis --- Electrons --- Effect of radiation on --- Properties --- Physique --- Congres et conferences
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Mechanical properties of solids --- Stopping power (Nuclear physics) --- Effective range (Nuclear physics) --- Ions --- Indexes --- Scattering --- -Ions --- -Stopping power (Nuclear physics) --- -Atomic stopping power --- Average ionization potential --- Kinetic energy of particles (Nuclear physics) --- Stopping cross section --- Collisions (Nuclear physics) --- Ionization --- Matter --- Nuclear reactions --- Particles (Nuclear physics) --- Radioactivity --- Linear energy transfer --- Particle range (Nuclear physics) --- Intermediates (Chemistry) --- Physics --- Solution (Chemistry) --- Electrolysis --- Electrons --- Range, Effective (Nuclear physics) --- Potential scattering --- -Indexes --- Properties --- Measurement --- Indexes. --- Atomic stopping power --- Scattering&delete&
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Ion implantation is the primary technology which is used in the semiconductor industry to introduce impurities into semiconductors to form devices and VLSI circuits. All VLSI manufacturing includes ion implantation steps. The technology has universal acceptance because of the accuracy of the number of implanted atoms, and the uniformity of the implantation across large semiconductor wafers. This book is a tutorial presentation of the physics, processes, technology and operation of ion implantation. Its purpose is to serve as a teaching manual, a source book of relevant data, and a compilation of comments from some of the world's most experienced practitioners of ion implantation. The primary problems in using ion implantation in VLSI processing are wafer cooling, dielectric charging, particulate contamination and process control. Each of these problems is addressed in a separate chapter. Each section is described from first principles in simple tutorial steps, while keeping the goal of finding answers to the most modern and complex problems in VLSI processing.
Solid state physics --- Ion bombardment. --- 538.91 --- Ion bombardment --- 538.97 --- Beams, Ion --- Bombardment, Ion --- Impact, Ion --- Ion beams --- Ion impact --- Ionic bombardment --- Collisions (Nuclear physics) --- Ions --- Structures, including transitions --- Special geometry and interaction with particles and radiation --- 538.97 Special geometry and interaction with particles and radiation --- 538.91 Structures, including transitions
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