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This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters. Some of the solutions contain extensions via discussion about topics of current interest in the field of semiconductor physics, such as spin-orbit coupling and k-linear band dispersion.

Electronics and optics of solids --- Semiconductors

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The Physics of Semiconductors contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the second edition many topics are extended and treated in more depth. e.g. dopant diffusion, nanowires, recombination in organic semiconductors, multi-junction solar cells, quantum dot and organic LEDs, thin film transistors, carbon-based nanostructures and transparent conductive oxides.

Solid state physics --- Chemical structure --- Electronics --- Electrical engineering --- Biotechnology --- legeringen --- vaste stof --- materie (fysica) --- nanotechniek --- biotechnologie --- elektronica --- micro-elektronica --- halfgeleiders --- elektrische circuits --- Nanotechnology --- Semiconductors --- 621.315.5 --- 621.315.5 Conductors and semiconductors according to material --- Conductors and semiconductors according to material --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Solid state electronics --- Molecular technology --- Nanoscale technology --- High technology --- Electronic materials --- Materials

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Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundamental design variable. Since all important design parameters can be expressed as continuous functions of the device inversion level, the design optimum as well as the technology limits can be easily found. The basic design concept consists in analog cell partitioning into the basic analog structures and sizing of these basic analog structures in a predefined procedural design sequence. The procedural design sequence ensures the correct propagation of design specifications, the verification of parameter limits and the local optimization loops. The proposed design procedure is also implemented as a CAD tool that follows this book. Finally, as a practical example, the design of analog amplifiers in a hybrid multi-bit Delta-Sigma modulator system is described in detail from system level to transistor level.

Engineering. --- Circuits and Systems. --- Processor Architectures. --- Computer science. --- Systems engineering. --- Ingénierie --- Informatique --- Ingénierie des systèmes --- Dielectrics. --- Electronic analog computers -- Circuits. --- Metal oxide semiconductors, Complementary. --- Metal oxide semiconductors. --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Electronic analog computers --- Circuits. --- Analog computer circuits --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Microprocessors. --- Electronics. --- Microelectronics. --- Electronic circuits. --- Electronics and Microelectronics, Instrumentation. --- Electronic circuits --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Informatics --- Science --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Electrical engineering --- Physical sciences --- Design and construction --- Minicomputers --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment

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Design of high voltage xDSL line drivers in standard CMOS fits in the quest for highly efficient fully integrated xDSL modems for central office applications. The book focusses on the line driver, the most demanding building block of the xDSL modem for lowering power. To reduce the cost, the cheapest technology is selected: standard CMOS, without any extra process options to increase the nominal supply voltage. The emphasis lies on the analysis, design and implementation of high voltage highly efficient line drivers in mainstream CMOS. Design of high voltage xDSL line drivers in standard CMOS starts from the Self-Oscillating Power Amplifier (SOPA), a highly efficient line driver for xDSL applications. However, in the nano-electronic era, the low supply voltage of CMOS results in very low efficiencies for line drivers and power amplifiers in general. In this book a technique is developed for designing high voltage circuits in a low voltage mainstream CMOS technology. Several practical design examples reveal the subtleties and challenges encountered during the design of high voltage circuits in low voltage standard CMOS. Such a high voltage buffer is then integrated into the SOPA architecture leading to the implementation of a high voltage highly efficient aDSL2+ line driver in a 1.2V 130nm mainstream CMOS technology. Design of high voltage xDSL line drivers in standard CMOS covers the total design flow of monolithic CMOS high voltage circuits. The book is essential reading for analog design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject.

Line drivers (Integrated circuits) --- Metal oxide semiconductors, Complementary. --- Design and construction. --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Buffers, Tri-state (Integrated circuits) --- Drivers, Line (Integrated circuits) --- Tri-state buffers (Integrated circuits) --- Amplifiers (Electronics) --- Computer interfaces --- Integrated circuits --- Systems engineering. --- Electronics. --- Computer engineering. --- Telecommunication. --- Circuits and Systems. --- Electronics and Microelectronics, Instrumentation. --- Electrical Engineering. --- Communications Engineering, Networks. --- Electric communication --- Mass communication --- Telecom --- Telecommunication industry --- Telecommunications --- Communication --- Information theory --- Telecommuting --- Computers --- Electrical engineering --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Electronic circuits. --- Microelectronics. --- Electrical engineering. --- Electric engineering --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Metal oxide semiconductors, Complementary

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How to determine transistor sizes and currents when the supply voltages of analog CMOS circuits do not exceed 1.2V and transistors operate in weak, moderate or strong inversion? The gm/ID methodology offers a solution provided a reference transconductance over drain current ratio is available. The reference may be the result of measurements carried out on real physical transistors or advanced models. The reference may also take advantage of a compact model. In The gm/ID Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits, we compare the semi-empirical to the compact model approach. Small numbers of parameters make the compact model attractive for the model paves the way towards analytic expressions unaffordable otherwise. The E.K.V model is a good candidate, but when it comes to short channel devices, compact models are either inaccurate or loose straightforwardness. Because sizing requires basically a reliable large signal representation of MOS transistors, we investigate the potential of the E.K.V model when its parameters are supposed to be bias dependent. The model-driven and semi-empirical methods are compared considering the Intrinsic Gain Stage and a few more complex circuits. A series of MATLAB files found on extras-springer.com allow redoing the tests.

Engineering. --- Circuits and Systems. --- Processor Architectures. --- Solid State Physics. --- Spectroscopy and Microscopy. --- Computer science. --- Systems engineering. --- Ingénierie --- Informatique --- Ingénierie des systèmes --- Metal oxide semiconductors, Complementary --- Low voltage integrated circuits --- Linear integrated circuits --- Design and construction --- Design and construction. --- Linear integrated circuits -- Design and construction. --- Low voltage integrated circuits -- Design and construction. --- Metal oxide semiconductors, Complementary -- Design and construction. --- Electrical Engineering --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- MOS complémentaires --- Circuits intégrés à faible consommation --- Circuits intégrés linéaires --- Conception et construction --- Microprocessors. --- Solid state physics. --- Spectroscopy. --- Microscopy. --- Electronics. --- Microelectronics. --- Electronic circuits. --- Electronics and Microelectronics, Instrumentation. --- Conception et construction. --- Metal oxide semiconductors, Complementary - Design and construction --- Low voltage integrated circuits - Design and construction --- Linear integrated circuits - Design and construction --- MOS complémentaires --- Circuits intégrés à faible consommation --- Circuits intégrés linéaires