Narrow your search

Library

KU Leuven (1)

LUCA School of Arts (1)

Odisee (1)

Thomas More Kempen (1)

Thomas More Mechelen (1)

UAntwerpen (1)

UCLL (1)

UGent (1)

Vlerick Business School (1)

VIVES (1)

More...

Resource type

book (1)

digital (1)


Language

English (1)


Year
From To Submit

1999 (1)

Listing 1 - 1 of 1
Sort by
Instabilities in silicon devices. Volume 3 : New insulators, devices and radiation effects
Authors: ---
ISBN: 9780444818010 0444818014 1281058106 9781281058102 9786611058104 0080534767 Year: 1999

Loading...
Export citation

Choose an application

Bookmark

Abstract

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called ""instabilities"". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is

Listing 1 - 1 of 1
Sort by