Search
Feedback
About UniCat 
Help
News
| Listing 1 - 10 of 144 | << page >> |
Sort by
|
Book
ISBN: 9173936863 9789173936866 Year: 2009 Publisher: Linköping : Linkopings Universitet,
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
The book is an extensive research study on the Epitaxial Growth and of SiC (Silicon Carbide) for High Power Devices. It explores the superior properties of SiC, including wide bandgap, high thermal conductivity, high critical electric field, and high electron mobility, which make it an excellent material for unipolar and bipolar electronic device applications operating under high temperature and high power conditions. The author, Jawad ul Hassan, aims to address the challenges in SiC bulk growth technology and the impact of epitaxial growth in improving the active layers in SiC-based devices. The study also delves into the influence of structural defects on minority carrier lifetime. The book is intended for researchers in the field of Science and Technology, specifically in the Semiconductor materials Division.
Book
ISBN: 3035730431 3035710430 1509026142 9783035730432 9783035710434 Year: 2017 Publisher: Zurich, Switzerland
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
Book
ISBN: 3035730423 9783035730425 3035710422 9783035710427 Year: 2015 Publisher: Pfaffikon Trans Tech
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
Book
ISBN: 0387813969 Year: 1977 Volume: 11 Publisher: Wien,New York : Springer-Verlag,
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
Book
Year: 2023 Publisher: Karlsruhe : KIT Scientific Publishing,
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
Book
Year: 2023 Publisher: Karlsruhe : KIT Scientific Publishing,
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
ISBN: 0878499636 Year: 2005 Publisher: Zürich Trans tech publ.
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
Book
Year: 2023 Publisher: Karlsruhe : KIT Scientific Publishing,
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
Book
ISBN: 1523125535 9674611231 Year: 2017 Publisher: Pulau Pinang : Penerbit Universiti Sains Malaysia,
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
Book
ISBN: 9789175199351 Year: 2012 Publisher: Linkopings Universitet
Abstract | Keywords | Export | Availability | Bookmark
Loading...Choose an application
- Reference Manager
- EndNote
- RefWorks (Direct export to RefWorks)
This dissertation by Remigijus Vasiliauskas explores the growth and performance of cubic silicon carbide (3C-SiC), a wide bandgap semiconductor that could replace silicon in high-power and high-frequency electronic devices. The research focuses on understanding the growth process, controlling defect formation, and developing methods for large-scale industrial production. Using a technique called sublimation epitaxy, the study successfully grows high-quality 3C-SiC on 6H-SiC substrates. Key aspects include the influence of substrate roughness, the nucleation process, and the electrical properties of the grown material. The work aims to make 3C-SiC a viable material for electronic applications, including the growth of monolayer graphene on 3C-SiC substrates.
Silicon carbide. --- Semiconductors. --- Silicon carbide --- Semiconductors
| Listing 1 - 10 of 144 | << page >> |
Sort by
|