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A new science emerges at the intersection of modern physics, computer s- ence,andmaterialscience. Thestruggletofurtherminiaturizeisputtingna- technology to the verge of creating single-electron and/or single-spin devices that operate by moving a single electron (spin) and can serve as transistors, memory cells, and for logic gates. These devices take advantage of quantum physics that dominates nanometer size scales. The devices that utilize met- based hybrid nanostructures may possess signi?cant advantages over those exploiting purely semiconducting materials. First, the chemistry of metals is typically simpler than that of semiconductors. Second, the electric properties of metals are much less sensitive to the structural defects and impurities than those of semiconductors. Next, metallic devices allow better electric and th- mal contacts. Another important plus point is that in metals the electron de Broigle wavelength is smaller by many orders of magnitude as compared to that in semiconductors. This makes metallic devices more promising with respect to their size - down to the size of an atom. Further, high bulk and interface thermal conductance in metallic devices are bene?cial for the heat withdraw. And, last but by no means the least, the high electron velocity in metals promises to accelerate enormously operation rates with respect to those in semiconductor-based devices. The ?nal note is that metals can - hibit strong ferromagnetism and/or superconductivity.

Quantum theory --- Transport theory --- Nanostructured materials --- Physics. --- Quantum physics. --- Condensed matter. --- Superconductivity. --- Superconductors. --- Magnetism. --- Magnetic materials. --- Quantum computers. --- Spintronics. --- Quantum Physics. --- Condensed Matter Physics. --- Strongly Correlated Systems, Superconductivity. --- Magnetism, Magnetic Materials. --- Quantum Information Technology, Spintronics. --- Magnetoelectronics --- Spin electronics --- Microelectronics --- Nanotechnology --- Computers --- Materials --- Mathematical physics --- Physics --- Electricity --- Magnetics --- Superconducting materials --- Superconductive devices --- Cryoelectronics --- Electronics --- Solid state electronics --- Electric conductivity --- Critical currents --- Superfluidity --- Condensed materials --- Condensed media --- Condensed phase --- Materials, Condensed --- Media, Condensed --- Phase, Condensed --- Liquids --- Matter --- Solids --- Quantum dynamics --- Quantum mechanics --- Quantum physics --- Mechanics --- Thermodynamics --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Quantum theory. --- Fluxtronics --- Spinelectronics --- Quantum transport --- Metallic nanostructures --- Hybrid nanostructures --- NATO

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The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications.

Technology: general issues --- History of engineering & technology --- concentrator systems --- GaInP/GaInAs/Ge --- multi-junction --- photovoltaics --- solar cells --- space --- triple-junction --- FeFET --- ferroelectric --- nonvolatile --- semiconductor memory --- SBT --- nanoantennas --- optics --- optoelectronic devices --- photovoltaic technology --- rectennas --- resistive memories --- thermal model --- heat equation --- thermal conductivity --- circuit simulation --- compact modeling --- resistive switching --- nanodevices --- power conversion efficiency --- MXenes --- electrodes --- additives --- HTL/ETL --- design of experiments --- GFET --- graphene --- high-frequency --- RF devices --- tolerance analysis --- molybdenum oxides --- green synthesis --- biological chelator --- additional capacity --- anodes --- lithium-ion batteries --- carbon nanotube --- junctionless --- tunnel field effect transistors --- chemical doping --- electrostatic doping --- NEGF simulation --- band-to-band tunneling --- switching performance --- nanoscale --- phosphorene --- black phosphorus --- nanoribbon --- edge contact --- contact resistance --- quantum transport --- NEGF --- metallization --- broadening --- zigzag carbon nanotube --- armchair-edge graphene nanoribbon --- quantum simulation --- sub-10 nm --- phototransistors --- photosensitivity --- subthreshold swing --- GaN HEMTs --- scaling --- electron mobility --- scattering --- polarization charge --- 2D materials --- rhenium --- selenides --- ReSe2 --- field-effect transistor --- pressure --- negative photoconductivity --- n/a

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

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• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation