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This Special Issue focuses on computational detailed studies (simulation, modeling, and calculations) of the structures, main properties, and peculiarities of the various nanomaterials (nanocrystals, nanoparticles, nanolayers, nanofibers, nanotubes, etc.) based on various elements, including organic and biological components, such as amino acids and peptides. For many practical applications in nanoelectronics., such materials as ferroelectrics and ferromagnetics, having switching parameters (polarization, magnetization), are highly requested, and simulation of dynamics and kinetics of their switching are a very important task. An important task for these studies is computer modeling and computational research of the properties on the various composites of the other nanostructures with polymeric ferroelectrics and with different graphene-like 2-dimensional structures. A wide range of contemporary computational methods and software are used in all these studies.

single nanowires --- silicon --- dual shells --- off-resonance --- absorption --- photocurrent --- magnetism --- transition-metal oxide clusters --- DFT calculations --- structure --- electronic properties --- LGD theory --- polarization --- nanoscale ferroelectrics --- kinetics --- homogeneous switching --- computer simulation --- fitting --- diphenylalanine --- peptide nanotubes --- self-assembly --- water molecules --- DFT --- molecular modelling --- semi-empirical methods --- chirality --- Ir-modified MoS2 --- decomposition components of SF6 --- adsorption and sensing --- atomistic simulation --- core–shell bi-magnetic nanoparticles --- Monte Carlo simulation --- interfacial exchange --- terahertz --- graphene --- plasmons --- Drude absorption --- polarization conversion --- yield surface --- plastic flow --- crystal plasticity --- polycrystalline aluminum --- dipeptides --- helical structures --- molecular modeling --- dipole moments --- tunnel junction --- machine learning --- III-nitride --- hydroxyapatite --- modeling --- density functional theory --- defects --- vacancies --- substitutions --- structural and optical properties --- band gap --- electronic density of states --- nanomaterials --- plasmon-induced transparency --- strontium titanate --- slow light --- iron doping --- hydroxyapatite bioceramics --- hybrid density functional --- X-ray absorption spectroscopy --- phenylalanine --- protein secondary structure --- optoelectronic devices --- nanostructured polymer film --- antireflection coating --- finite-difference time-domain method --- ferroelectrics --- heterostructures --- domains --- negative capacitance

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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

MOSFET --- n/a --- total ionizing dose (TID) --- low power consumption --- process simulation --- two-dimensional material --- negative-capacitance --- power consumption --- technology computer aided design (TCAD) --- thin-film transistors (TFTs) --- band-to-band tunneling (BTBT) --- nanowires --- inversion channel --- metal oxide semiconductor field effect transistor (MOSFET) --- spike-timing-dependent plasticity (STDP) --- field effect transistor --- segregation --- systematic variations --- Sentaurus TCAD --- indium selenide --- nanosheets --- technology computer-aided design (TCAD) --- high-? dielectric --- subthreshold bias range --- statistical variations --- fin field effect transistor (FinFET) --- compact models --- non-equilibrium Green’s function --- etching simulation --- highly miniaturized transistor structure --- compact model --- silicon nanowire --- surface potential --- Silicon-Germanium source/drain (SiGe S/D) --- nanowire --- plasma-aided molecular beam epitaxy (MBE) --- phonon scattering --- mobility --- silicon-on-insulator --- drain engineered --- device simulation --- variability --- semi-floating gate --- synaptic transistor --- neuromorphic system --- theoretical model --- CMOS --- ferroelectrics --- tunnel field-effect transistor (TFET) --- SiGe --- metal gate granularity --- buried channel --- ON-state --- bulk NMOS devices --- ambipolar --- piezoelectrics --- tunnel field effect transistor (TFET) --- FinFETs --- polarization --- field-effect transistor --- line edge roughness --- random discrete dopants --- radiation hardened by design (RHBD) --- low energy --- flux calculation --- doping incorporation --- low voltage --- topography simulation --- MOS devices --- low-frequency noise --- high-k --- layout --- level set --- process variations --- subthreshold --- metal gate stack --- electrostatic discharge (ESD) --- non-equilibrium Green's function