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Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems.

Technology: general issues --- microbolometer --- infrared sensor --- complementary metal-oxide semiconductor (CMOS) --- high sensitivity --- temperature sensor --- microresonator --- MEMS --- clamped–clamped beam --- thermal detector --- Infrared detector --- strained layer superlattice --- InAs/InAsSb --- absorption coefficient --- barrier detector --- high operating temperature --- manganite --- heterostructure --- photodetector --- heterostructures --- split-off band --- wavelength extension --- device performance --- ultrasound transducer --- photoacoustic imaging --- piezoelectric --- micromachined --- CMUT --- PMUT --- optical ultrasound detection --- type-II superlattice --- infrared detector --- mid-wavelength infrared (MWIR) --- unipolar barrier --- InAs/GaSb --- T2SL --- IR --- TE-cooled --- spectroscopy --- RoHS --- MCT --- n/a --- clamped-clamped beam

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Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems.

Technology: general issues --- microbolometer --- infrared sensor --- complementary metal-oxide semiconductor (CMOS) --- high sensitivity --- temperature sensor --- microresonator --- MEMS --- clamped-clamped beam --- thermal detector --- Infrared detector --- strained layer superlattice --- InAs/InAsSb --- absorption coefficient --- barrier detector --- high operating temperature --- manganite --- heterostructure --- photodetector --- heterostructures --- split-off band --- wavelength extension --- device performance --- ultrasound transducer --- photoacoustic imaging --- piezoelectric --- micromachined --- CMUT --- PMUT --- optical ultrasound detection --- type-II superlattice --- infrared detector --- mid-wavelength infrared (MWIR) --- unipolar barrier --- InAs/GaSb --- T2SL --- IR --- TE-cooled --- spectroscopy --- RoHS --- MCT

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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.

graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a

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Micro and nano-electro-mechanical system (M/NEMS) devices constitute key technological building blocks to enable increased additional functionalities within Integrated Circuits (ICs) in the More-Than-Moore era, as described in the International Technology Roadmap for Semiconductors. The CMOS ICs and M/NEMS dies can be combined in the same package (SiP), or integrated within a single chip (SoC). In the SoC approach the M/NEMS devices are monolithically integrated together with CMOS circuitry allowing the development of compact and low-cost CMOS-M/NEMS devices for multiple applications (physical sensors, chemical sensors, biosensors, actuators, energy actuators, filters, mechanical relays, and others). On-chip CMOS electronics integration can overcome limitations related to the extremely low-level signals in sub-micrometer and nanometer scale electromechanical transducers enabling novel breakthrough applications. This Special Issue aims to gather high quality research contributions dealing with MEMS and NEMS devices monolithically integrated with CMOS, independently of the final application and fabrication approach adopted (MEMS-first, interleaved MEMS, MEMS-last or others).]

encapsulation --- n/a --- NEM memory switch --- magnetotransistor --- gas sensor --- nano-system array --- metal oxide (MOX) sensor --- capacitive pressure sensor --- real-time temperature compensation loop --- mechanical relays --- single-crystal silicon (SC-Si) --- MEMS relays --- MEMS --- oscillator --- micro-electro-mechanical system (MEMS) --- uncooled IR-bolometer --- microelectromechanical systems --- microbolometer --- programmable sustaining amplifier --- micro sensor --- CMOS-MEMS --- pierce oscillator --- MEMS resonators --- micro/nanoelectromechanical systems (MEMS/NEMS) --- resonator --- microhotplate --- NEMS --- application-specific integrated circuit (ASIC) --- MEMS modelling --- magnetic field --- chopper instrumentation amplifier --- microresonators --- interface circuit --- Hall effect --- thermal detector --- temperature sensor --- infrared sensor --- CMOS–NEMS --- CMOS --- atomic force microscope --- MEMS switches --- stent --- micro-electro-mechanical systems (MEMS) sensors --- nano resonator --- silicon-on-insulator (SOI) --- MEMS-ASIC integration --- Sigma-Delta --- MEMS characterization --- high-Q capacitive accelerometer --- mass sensors --- M3D --- CMOS-NEMS

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The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems.

spin memristor --- mask operation --- memristor switch --- memristor crossbar --- image processing --- CMOS --- voltage-controlled oscillator --- switched-biasing --- flicker noise --- phase noise --- current source --- figure-of-merit --- pixel-level ADC --- current-input ADC --- readout circuit --- microbolometer --- high SNR --- wide dynamic range --- current-reuse --- injection-locked frequency divider --- radar sensor --- wideband --- RF receiver --- blocker --- second-order intermodulation (IM2) --- orthogonal frequency division modulation (OFDM) --- MedRadio --- medical implanted communication service (MICS) --- biomedical device --- biosensors --- LC-VCO --- current-shaping --- 90 nm --- current tail --- varactor --- LC tank --- on-wafer --- vibration energy harvester --- power management circuit --- CMOS rectifier --- dynamic threshold cancellation technique --- high power conversion efficiency --- CMOS circuit --- analog system --- signal processing --- learning algorithm --- artificial neural network --- freeware --- open science --- analog microelectronics design --- long channel transistors --- short channel transistors --- integrated circuit design --- CMOS design --- VLSI --- higher education --- educational innovation --- integrated circuit layout --- complex thinking --- CMOS detector --- concurrent-mode --- differential detector IC --- imaging SNR --- integrated folded-dipole antenna --- sub-terahertz imaging --- voltage responsivity